发明申请
- 专利标题: FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
- 专利标题(中): 膜沉积装置和膜沉积方法
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申请号: US12519933申请日: 2007-11-29
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公开(公告)号: US20100092666A1公开(公告)日: 2010-04-15
- 发明人: Eisuke Morisaki , Hirokatsu Kobayashi , Jun Yoshikawa , Ikuo Sawada , Tsunenobu Kimoto , Noriaki Kawamoto , Masatoshi Aketa
- 申请人: Eisuke Morisaki , Hirokatsu Kobayashi , Jun Yoshikawa , Ikuo Sawada , Tsunenobu Kimoto , Noriaki Kawamoto , Masatoshi Aketa
- 申请人地址: JP Minato-ku
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2006-348502 20061225
- 国际申请: PCT/JP2007/073074 WO 20071129
- 主分类号: C23C16/46
- IPC分类号: C23C16/46 ; C23C16/00
摘要:
A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.
公开/授权文献
- US08696814B2 Film deposition apparatus and film deposition method 公开/授权日:2014-04-15
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