公开(公告)号：US08696814B2

公开(公告)日：2014-04-15

申请号：US12519933

申请日：2007-11-29

申请人： Eisuke Morisaki ,  Hirokatsu Kobayashi ,  Jun Yoshikawa ,  Ikuo Sawada ,  Tsunenobu Kimoto ,  Noriaki Kawamoto ,  Masatoshi Aketa

发明人： Eisuke Morisaki ,  Hirokatsu Kobayashi ,  Jun Yoshikawa ,  Ikuo Sawada ,  Tsunenobu Kimoto ,  Noriaki Kawamoto ,  Masatoshi Aketa

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/481 ,  C23C16/325 ,  C23C16/46 ,  C30B25/10 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/68764 ,  H01L21/68771 ,  H01L29/66068

摘要： A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

摘要翻译： 所公开的膜沉积设备包括处理室，其内保持有减压空间; 气体供给部，其向所述处理室供给成膜气体; 基板保持部，其由以碳为主要成分的材料制成，并将基板保持在所述处理室中; 线圈，其布置在所述处理室的外部并感应加热所述基板保持部; 以及绝热构件，其覆盖所述基板保持部并被布置成与所述处理室分离，其中所述减压空间被分离成供给所述成膜气体的成膜气体供给空间和限定了所述隔热空间的成膜气体供给空间 在所述基板保持部和所述处理室之间，并且其中向所述绝热空间供给冷却介质。

公开(公告)号：US20100092666A1

公开(公告)日：2010-04-15

申请号：US12519933

申请日：2007-11-29

申请人： Eisuke Morisaki ,  Hirokatsu Kobayashi ,  Jun Yoshikawa ,  Ikuo Sawada ,  Tsunenobu Kimoto ,  Noriaki Kawamoto ,  Masatoshi Aketa

发明人： Eisuke Morisaki ,  Hirokatsu Kobayashi ,  Jun Yoshikawa ,  Ikuo Sawada ,  Tsunenobu Kimoto ,  Noriaki Kawamoto ,  Masatoshi Aketa

IPC分类号： C23C16/46 ,  C23C16/00

CPC分类号： C23C16/481 ,  C23C16/325 ,  C23C16/46 ,  C30B25/10 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/68764 ,  H01L21/68771 ,  H01L29/66068

摘要： A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

摘要翻译： 所公开的膜沉积设备包括处理室，其内保持有减压空间; 气体供给部，其向所述处理室供给成膜气体; 基板保持部，其由以碳为主要成分的材料制成，并将基板保持在所述处理室中; 线圈，其布置在所述处理室的外部并感应加热所述基板保持部; 以及绝热构件，其覆盖所述基板保持部并被布置成与所述处理室分离，其中所述减压空间被分离成供给所述成膜气体的成膜气体供给空间和限定了所述隔热空间的成膜气体供给空间 在所述基板保持部和所述处理室之间，并且其中向所述绝热空间供给冷却介质。

公开(公告)号：US09159846B2

公开(公告)日：2015-10-13

申请号：US13314268

申请日：2011-12-08

申请人： Shuhei Mitani ,  Masatoshi Aketa

发明人： Shuhei Mitani ,  Masatoshi Aketa

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/16

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/00 ,  H01L2224/05552

摘要： A SiC semiconductor device includes a SiC semiconductor layer having a first-conductivity-type impurity, a field insulation film formed on a front surface of the SiC semiconductor layer and provided with an opening for exposing therethrough the front surface of the SiC semiconductor layer, an electrode connected to the SiC semiconductor layer through the opening of the field insulation film, and a guard ring having a second-conductivity-type impurity and being formed in a surface layer portion of the SiC semiconductor layer to make contact with a terminal end portion of the electrode connected to the SiC semiconductor layer. A second-conductivity-type impurity concentration in a surface layer portion of the guard ring making contact with the electrode is smaller than a first-conductivity-type impurity concentration in the SiC semiconductor layer.

摘要翻译： SiC半导体器件包括具有第一导电类型杂质的SiC半导体层，形成在SiC半导体层的前表面上并且具有用于暴露于其中的SiC半导体层的前表面的开口的场绝缘膜， 通过场绝缘膜的开口与SiC半导体层连接的电极，以及具有第二导电型杂质的保护环，并形成在SiC半导体层的表层部分中，以与SiC半导体层的末端部分接触 所述电极连接到所述SiC半导体层。 与该电极接触的保护环的表层部的第二导电型杂质浓度小于SiC半导体层的第一导电型杂质浓度。

公开(公告)号：US09111852B2

公开(公告)日：2015-08-18

申请号：US14235784

申请日：2012-07-27

申请人： Masatoshi Aketa ,  Yuta Yokotsuji

发明人： Masatoshi Aketa ,  Yuta Yokotsuji

IPC分类号： H01L29/16 ,  H01L29/20 ,  H01L29/872 ,  H01L29/861 ,  H01L29/08

CPC分类号： H01L29/872 ,  H01L23/535 ,  H01L29/06 ,  H01L29/0607 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66143 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/8725

摘要： The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR.

摘要翻译： 本发明的半导体器件包括由宽带隙半导体形成的第一导电型半导体层和形成为与半导体层的表面接触的肖特基电极，并且具有0.3V至0.7V的阈值电压Vth，以及 额定电压VR为1×10-9A / cm2至1×10-4A / cm2的漏电流Jr。

公开(公告)号：US09111769B2

公开(公告)日：2015-08-18

申请号：US14118173

申请日：2012-05-16

申请人： Masatoshi Aketa ,  Yuta Yokotsuji

发明人： Masatoshi Aketa ,  Yuta Yokotsuji

IPC分类号： H01L27/095 ,  H01L29/47 ,  H01L29/812 ,  H01L31/07 ,  H01L31/108 ,  H01L29/06 ,  H01L29/16 ,  H01L29/872 ,  H01L21/04 ,  H01L21/265 ,  H01L29/20 ,  H01L29/66

CPC分类号： H01L29/063 ,  H01L21/0415 ,  H01L21/046 ,  H01L21/26546 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/08 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872

摘要： A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.

摘要翻译： 本发明的半导体器件包括由宽带隙半导体构成的半导体层和与半导体层的表面接触的肖特基电极。 半导体层包括形成半导体层的表面的漂移层和形成在漂移层的表面层部分上并且具有比漂移层更高的电阻的高电阻层。 通过从半导体层的表面注入杂质离子然后在小于1500℃进行退火处理来形成高电阻层。

公开(公告)号：US20120146055A1

公开(公告)日：2012-06-14

申请号：US13314268

申请日：2011-12-08

申请人： Shuhei MITANI ,  Masatoshi Aketa

发明人： Shuhei MITANI ,  Masatoshi Aketa

IPC分类号： H01L29/772

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/00 ,  H01L2224/05552

摘要： A SiC semiconductor device includes a SiC semiconductor layer having a first-conductivity-type impurity, a field insulation film formed on a front surface of the SiC semiconductor layer and provided with an opening for exposing therethrough the front surface of the SiC semiconductor layer, an electrode connected to the SiC semiconductor layer through the opening of the field insulation film, and a guard ring having a second-conductivity-type impurity and being formed in a surface layer portion of the SiC semiconductor layer to make contact with a terminal end portion of the electrode connected to the SiC semiconductor layer. A second-conductivity-type impurity concentration in a surface layer portion of the guard ring making contact with the electrode is smaller than a first-conductivity-type impurity concentration in the SiC semiconductor layer.

摘要翻译： SiC半导体器件包括具有第一导电类型杂质的SiC半导体层，形成在SiC半导体层的前表面上并且具有用于暴露于其中的SiC半导体层的前表面的开口的场绝缘膜， 通过场绝缘膜的开口与SiC半导体层连接的电极，以及具有第二导电型杂质的保护环，并形成在SiC半导体层的表层部分中，以与SiC半导体层的末端部分接触 所述电极连接到所述SiC半导体层。 与该电极接触的保护环的表层部的第二导电型杂质浓度小于SiC半导体层的第一导电型杂质浓度。

公开(公告)号：US20150034970A1

公开(公告)日：2015-02-05

申请号：US14118173

申请日：2012-05-16

申请人： Masatoshi Aketa ,  Yuta Yokotsuji

发明人： Masatoshi Aketa ,  Yuta Yokotsuji

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L21/04 ,  H01L29/872 ,  H01L21/265 ,  H01L29/20 ,  H01L29/66

CPC分类号： H01L29/063 ,  H01L21/0415 ,  H01L21/046 ,  H01L21/26546 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/08 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872

摘要： A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.

摘要翻译： 本发明的半导体器件包括由宽带隙半导体构成的半导体层和与半导体层的表面接触的肖特基电极。 半导体层包括形成半导体层的表面的漂移层和形成在漂移层的表面层部分上并且具有比漂移层更高的电阻的高电阻层。 通过从半导体层的表面注入杂质离子然后在小于1500℃进行退火处理来形成高电阻层。

公开(公告)号：US08633560B2

公开(公告)日：2014-01-21

申请号：US13441202

申请日：2012-04-06

申请人： Masatoshi Aketa

发明人： Masatoshi Aketa

IPC分类号： H01L29/47

CPC分类号： H01L29/0619 ,  H01L29/1095 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/872 ,  Y02B10/30

摘要： A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being connected to a surface of an SiC epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall. Furthermore, an edge portion of the bottom wall of each of the trapezoidal trenches is formed to be in the shape bent towards the outside of the trapezoidal trench in the manner that a radius of curvature R satisfies 0.01

摘要翻译： 提供能够减小反向泄漏电流和正向电压的半导体器件。 在半导体器件中，阳极通过与表面形成的SiC外延层的表面连接，形成在具有侧壁和底壁的表面侧的梯形沟槽的表面上进行肖特基结。 此外，每个梯形沟槽的底壁的边缘部分形成为以梯形曲率半径R满足0.01

公开(公告)号：US09419117B2

公开(公告)日：2016-08-16

申请号：US14236567

申请日：2012-07-30

申请人： Masatoshi Aketa ,  Yuki Nakano

发明人： Masatoshi Aketa ,  Yuki Nakano

IPC分类号： H01L29/739 ,  H01L29/16 ,  H01L29/66 ,  H01L29/417 ,  H01L23/00 ,  H01L29/08 ,  H01L29/47 ,  H01L29/06 ,  H01L25/18 ,  H01L23/31

CPC分类号： H01L27/0716 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02634 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/8213 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49844 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L25/18 ,  H01L25/50 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/0865 ,  H01L29/1004 ,  H01L29/1033 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7805 ,  H01L29/7827 ,  H01L29/872 ,  H01L2224/02166 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05018 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/4917 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/10155 ,  H01L2924/10158 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H02P27/06 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention is directed to a semiconductor device including a semiconductor chip formed with an SiC-IGBT including an SiC semiconductor layer, a first conductive-type collector region formed such that the collector region is exposed on a second surface of the SiC semiconductor layer, a second conductive-type base region formed such that the base region is in contact with the collector region, a first conductive-type channel region formed such that the channel region is in contact with the base region, a second conductive-type emitter region formed such that the emitter region is in contact with the channel region to define a portion of a first surface of the SiC semiconductor layer, a collector electrode connected to the collector region, and an emitter electrode connected to the emitter region, and a MOSFET including a second conductive-type source region electrically connected to the emitter electrode and a second conductive-type drain region electrically connected to the collector electrode, the MOSFET connected in parallel to the SiC-IGBT.

摘要翻译： 本发明涉及一种半导体器件，其包括由包括SiC半导体层的SiC-IGBT形成的半导体芯片，形成为在SiC半导体层的第二表面上露出集电极区域的第一导电型集电极区域， 形成为使得所述基极区域与所述集电极区域接触的第二导电型基极区域，形成为使得所述沟道区域与所述基极区域接触的第一导电型沟道区域，形成的第二导电型发射极区域 使得发射极区域与沟道区域接触以限定SiC半导体层的第一表面的一部分，连接到集电极区域的集电极和连接到发射极区域的发射极，以及包括 电连接到发射极的第二导电型源区和与c电连接的第二导电型漏区 阴极电极，MOSFET与SiC-IGBT并联连接。

公开(公告)号：US20140203299A1

公开(公告)日：2014-07-24

申请号：US14235784

申请日：2012-07-27

申请人： Masatoshi Aketa ,  Yuta Yokotsuji

发明人： Masatoshi Aketa ,  Yuta Yokotsuji

IPC分类号： H01L29/872 ,  H01L29/20 ,  H01L29/16

CPC分类号： H01L29/872 ,  H01L23/535 ,  H01L29/06 ,  H01L29/0607 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66143 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/8725

摘要： The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR.

摘要翻译： 本发明的半导体器件包括由宽带隙半导体形成的第一导电型半导体层和形成为与半导体层的表面接触的肖特基电极，并且具有0.3V至0.7V的阈值电压Vth，以及 额定电压VR为1×10-9A / cm2至1×10-4A / cm2的漏电流Jr。