发明申请
- 专利标题: SUBSTRATE PROCESSING APPARATUS
- 专利标题(中): 基板加工设备
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申请号: US12689815申请日: 2010-01-19
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公开(公告)号: US20100116789A1公开(公告)日: 2010-05-13
- 发明人: Toshihisa Nozawa , Tamaki Yuasa
- 申请人: Toshihisa Nozawa , Tamaki Yuasa
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 优先权: JPP2003-052080 20030227
- 主分类号: C23C16/44
- IPC分类号: C23C16/44 ; C23C16/00
摘要:
When plasma processing is finished, a gate valve 13a is closed and cleaning gas is ejected from holes 121a of a shower plate 121, and at the same time, a microwave is generated from a microwave generator 101. Further, at this time, the inside of a process chamber 110 is exhausted through a second exhaust port 106. Since the exhaust is conducted through a second exhaust port 106 positioned lower than a wafer stage 104 in a lowered state when the inside of the process chamber 110 is cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber 110.
公开/授权文献
- US08052887B2 Substrate processing apparatus 公开/授权日:2011-11-08
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