公开(公告)号：US20090008369A1

公开(公告)日：2009-01-08

申请号：US12161591

申请日：2007-03-05

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： B23K9/00

CPC分类号： H01L21/67126 ,  C23C16/4412 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/67017 ,  Y10T137/85978

摘要： In a processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus includes an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof; a mounting table provided within the processing chamber for holding the target object; a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port; and a gas exhaust system connected to the pressure control valve. The pressure control valve is eccentrically arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

摘要翻译： 在用于以预定处理压力对目标物体进行特定处理的处理装置中，该装置包括：排气口，其具有形成在其底部的排气口; 设置在处理室内用于保持目标物体的安装台; 连接到排气口的压力控制阀，所述压力控制阀包括用于改变阀口的开口区域的面积的滑动式阀体; 以及连接到压力控制阀的排气系统。 压力控制阀偏心地布置成使得安装台的中心轴线位于在压力控制阀的阀开度的实际使用区域上形成的压力控制阀的开口区域内。

公开(公告)号：USD563950S1

公开(公告)日：2008-03-11

申请号：US29281085

申请日：2007-06-14

申请人： Jun Yamashita ,  Tamaki Yuasa ,  Cai Zhong Tian

设计人： Jun Yamashita ,  Tamaki Yuasa ,  Cai Zhong Tian

公开(公告)号：US20070264441A1

公开(公告)日：2007-11-15

申请号：US10589272

申请日：2005-02-15

申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

IPC分类号： C08F2/46 ,  C23C16/00

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.

摘要翻译： 通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。 在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与 透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。 在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。

公开(公告)号：US20070221130A1

公开(公告)日：2007-09-27

申请号：US11597523

申请日：2005-05-23

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： C23C16/44

CPC分类号： C23C16/4401 ,  C23C16/4412 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862

摘要： The present invention has the object of improving the efficiency of cleaning in a substrate processing apparatus. Thus, the present invention uses a substrate processing apparatus, comprising: a processing vessel holding therein a substrate to be processed; gas supply means for supplying a gas for processing into said processing vessel; a stage provided in the processing vessel for holding said substrate to be processed; a shielding plate dividing a space inside said processing vessel into a first space and a second space, wherein there are provided: a first evacuation path for evacuating said first space; and a second evacuation path for evacuating said second space.

摘要翻译： 本发明的目的是提高基板处理装置中的清洁效率。 因此，本发明使用基板处理装置，其包括：处理容器，在其中容纳待处理的基板; 用于将气体供给到所述处理容器中的气体供给装置; 设置在处理容器中用于保持待处理的基板的台阶; 将所述处理容器内的空间分割成第一空间和第二空间的遮蔽板，其特征在于，具备：排出所述第一空间的第一排出路径; 以及用于排出所述第二空间的第二抽空路径。

公开(公告)号：US08785809B2

公开(公告)日：2014-07-22

申请号：US13453621

申请日：2012-04-23

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： B23K10/00

CPC分类号： H01L21/67126 ,  C23C16/4412 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/67017 ,  Y10T137/85978

摘要： A processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus having an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof, a mounting table provided within the processing chamber for holding the target object, a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port, and a gas exhaust system connected to the pressure control valve. The pressure control valve is arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

摘要翻译： 一种用于以预定处理压力对目标物体进行特定处理的处理装置，该装置具有一个具有形成在其底部的排气口的可抽空处理室，设置在处理室内用于保持目标物体的安装台 连接到所述排气口的压力控制阀，所述压力控制阀包括用于改变阀口的开口区域的区域的滑动式阀体和连接到所述压力控制阀的排气系统。 压力控制阀被布置成使得安装台的中心轴位于在压力控制阀的阀开度的实际使用区域上形成的压力控制阀的开口区域内。

公开(公告)号：US08267040B2

公开(公告)日：2012-09-18

申请号：US10589272

申请日：2005-02-15

申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Zhong Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Zhong Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.

摘要翻译： 在通过供给微波产生的等离子体处理处理容器中的晶片的等离子体处理装置中，透光窗口在其下表面的中心区域具有由与材料相同的材料制成的悬挂部分 透光窗。 在悬挂部的外周面与从支撑部延续的侧壁内表面之间形成有间隙，间隙长度为0.5〜10mm，更优选为0.5〜5mm。 在接触点处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片的量也减少。

公开(公告)号：US20090266487A1

公开(公告)日：2009-10-29

申请号：US12094815

申请日：2006-11-15

申请人： Caizhong Tian ,  Tamaki Yuasa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tamaki Yuasa ,  Toshihisa Nozawa

IPC分类号： H01L21/465 ,  C23C16/511 ,  H05B6/64

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： A microwave introduction device includes a microwave generator for generating a microwave of a predetermined frequency, a mode converter for converting the microwave into a predetermined oscillation mode, a planar antenna member arranged toward a predetermined space, and a coaxial waveguide connecting the mode converter with the planar antenna member to propagate the microwave. A central conductor of the coaxial waveguide is formed in a cylindrical shape, an inner diameter D1 of the central conductor is not smaller than a first predetermined value, and an outer conductor of the central conductor is also formed in a cylindrical shape. A ratio r1/r2 of a radius r1 of an inner diameter of the outer conductor to a radius r2 of an outer diameter of the central conductor is maintained at a second predetermined value and the inner diameter D2 the outer conductor is not greater than a third predetermined value.

摘要翻译： 微波引入装置包括用于产生预定频率的微波的微波发生器，用于将微波转换成预定振荡模式的模式转换器，朝向预定空间布置的平面天线部件以及将模式转换器与 平面天线部件传播微波。 同轴波导的中心导体形成为圆筒形状，中心导体的内径D1不小于第一预定值，中心导体的外导体也形成为圆柱形。 外导体的内径的半径r1与中心导体的外径的半径r2的比率r1 / r2保持在第二规定值，外径D2的外径不大于第三 预定值。

公开(公告)号：US08173928B2

公开(公告)日：2012-05-08

申请号：US12161591

申请日：2007-03-05

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： B23K10/00

CPC分类号： H01L21/67126 ,  C23C16/4412 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/67017 ,  Y10T137/85978

摘要： In a processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus includes an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof; a mounting table provided within the processing chamber for holding the target object; a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port; and a gas exhaust system connected to the pressure control valve. The pressure control valve is eccentrically arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

摘要翻译： 在用于以预定处理压力对目标物体进行特定处理的处理装置中，该装置包括：排气口，其具有形成在其底部的排气口; 设置在处理室内用于保持目标物体的安装台; 连接到排气口的压力控制阀，所述压力控制阀包括用于改变阀口的开口区域的面积的滑动式阀体; 以及连接到压力控制阀的排气系统。 压力控制阀偏心地布置成使得安装台的中心轴线位于在压力控制阀的阀开度的实际使用区域上形成的压力控制阀的开口区域内。

公开(公告)号：US08052887B2

公开(公告)日：2011-11-08

申请号：US12689815

申请日：2010-01-19

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： H01J37/32834 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32862

摘要： When plasma processing is finished, a gate valve 13a is closed and cleaning gas is ejected from holes 121a of a shower plate 121, and at the same time, a microwave is generated from a microwave generator 101. Further, at this time, the inside of a process chamber 110 is exhausted through a second exhaust port 106. Since the exhaust is conducted through a second exhaust port 106 positioned lower than a wafer stage 104 in a lowered state when the inside of the process chamber 110 is cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber 110.

摘要翻译： 当等离子体处理完成时，关闭闸阀13a，并且从喷淋板121的孔121a喷射清洁气体，同时从微波发生器101产生微波。此外，此时，内部 处理室110通过第二排气口106排出。由于当处理室110的内部被清洁时，排气通过位于低于晶片台104的第二排气口106处于降低状态，所以可能 以更有效地去除特别沉积在处理室110下部的气体和反应产物。

公开(公告)号：US20100116789A1

公开(公告)日：2010-05-13

申请号：US12689815

申请日：2010-01-19

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： H01J37/32834 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32862

摘要： When plasma processing is finished, a gate valve 13a is closed and cleaning gas is ejected from holes 121a of a shower plate 121, and at the same time, a microwave is generated from a microwave generator 101. Further, at this time, the inside of a process chamber 110 is exhausted through a second exhaust port 106. Since the exhaust is conducted through a second exhaust port 106 positioned lower than a wafer stage 104 in a lowered state when the inside of the process chamber 110 is cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber 110.

摘要翻译： 当等离子体处理完成时，关闭闸阀13a，并且从喷淋板121的孔121a喷射清洁气体，同时从微波发生器101产生微波。此外，此时，内部 处理室110通过第二排气口106排出。由于当处理室110的内部被清洁时，排气通过位于低于晶片台104的第二排气口106处于降低状态，所以可能 以更有效地去除特别沉积在处理室110下部的气体和反应产物。