公开(公告)号：US08173928B2

公开(公告)日：2012-05-08

申请号：US12161591

申请日：2007-03-05

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： B23K10/00

CPC分类号： H01L21/67126 ,  C23C16/4412 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/67017 ,  Y10T137/85978

摘要： In a processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus includes an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof; a mounting table provided within the processing chamber for holding the target object; a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port; and a gas exhaust system connected to the pressure control valve. The pressure control valve is eccentrically arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

摘要翻译： 在用于以预定处理压力对目标物体进行特定处理的处理装置中，该装置包括：排气口，其具有形成在其底部的排气口; 设置在处理室内用于保持目标物体的安装台; 连接到排气口的压力控制阀，所述压力控制阀包括用于改变阀口的开口区域的面积的滑动式阀体; 以及连接到压力控制阀的排气系统。 压力控制阀偏心地布置成使得安装台的中心轴线位于在压力控制阀的阀开度的实际使用区域上形成的压力控制阀的开口区域内。

公开(公告)号：US08052887B2

公开(公告)日：2011-11-08

申请号：US12689815

申请日：2010-01-19

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： H01J37/32834 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32862

摘要： When plasma processing is finished, a gate valve 13a is closed and cleaning gas is ejected from holes 121a of a shower plate 121, and at the same time, a microwave is generated from a microwave generator 101. Further, at this time, the inside of a process chamber 110 is exhausted through a second exhaust port 106. Since the exhaust is conducted through a second exhaust port 106 positioned lower than a wafer stage 104 in a lowered state when the inside of the process chamber 110 is cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber 110.

摘要翻译： 当等离子体处理完成时，关闭闸阀13a，并且从喷淋板121的孔121a喷射清洁气体，同时从微波发生器101产生微波。此外，此时，内部 处理室110通过第二排气口106排出。由于当处理室110的内部被清洁时，排气通过位于低于晶片台104的第二排气口106处于降低状态，所以可能 以更有效地去除特别沉积在处理室110下部的气体和反应产物。

公开(公告)号：US20100116789A1

公开(公告)日：2010-05-13

申请号：US12689815

申请日：2010-01-19

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： H01J37/32834 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32862

摘要： When plasma processing is finished, a gate valve 13a is closed and cleaning gas is ejected from holes 121a of a shower plate 121, and at the same time, a microwave is generated from a microwave generator 101. Further, at this time, the inside of a process chamber 110 is exhausted through a second exhaust port 106. Since the exhaust is conducted through a second exhaust port 106 positioned lower than a wafer stage 104 in a lowered state when the inside of the process chamber 110 is cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber 110.

摘要翻译： 当等离子体处理完成时，关闭闸阀13a，并且从喷淋板121的孔121a喷射清洁气体，同时从微波发生器101产生微波。此外，此时，内部 处理室110通过第二排气口106排出。由于当处理室110的内部被清洁时，排气通过位于低于晶片台104的第二排气口106处于降低状态，所以可能 以更有效地去除特别沉积在处理室110下部的气体和反应产物。

公开(公告)号：US20120204983A1

公开(公告)日：2012-08-16

申请号：US13453621

申请日：2012-04-23

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： E03B11/16

CPC分类号： H01L21/67126 ,  C23C16/4412 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/67017 ,  Y10T137/85978

摘要： A processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus having an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof, a mounting table provided within the processing chamber for holding the target object, a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port, and a gas exhaust system connected to the pressure control valve. The pressure control valve is arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

摘要翻译： 一种用于以预定处理压力对目标物体进行特定处理的处理装置，该装置具有一个具有形成在其底部的排气口的可抽空处理室，设置在处理室内用于保持目标物体的安装台 连接到所述排气口的压力控制阀，所述压力控制阀包括用于改变阀口的开口区域的区域的滑动式阀体和连接到所述压力控制阀的排气系统。 压力控制阀被布置成使得安装台的中心轴位于在压力控制阀的阀开度的实际使用区域上形成的压力控制阀的开口区域内。

公开(公告)号：US20090008369A1

公开(公告)日：2009-01-08

申请号：US12161591

申请日：2007-03-05

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： B23K9/00

CPC分类号： H01L21/67126 ,  C23C16/4412 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/67017 ,  Y10T137/85978

摘要： In a processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus includes an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof; a mounting table provided within the processing chamber for holding the target object; a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port; and a gas exhaust system connected to the pressure control valve. The pressure control valve is eccentrically arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

摘要翻译： 在用于以预定处理压力对目标物体进行特定处理的处理装置中，该装置包括：排气口，其具有形成在其底部的排气口; 设置在处理室内用于保持目标物体的安装台; 连接到排气口的压力控制阀，所述压力控制阀包括用于改变阀口的开口区域的面积的滑动式阀体; 以及连接到压力控制阀的排气系统。 压力控制阀偏心地布置成使得安装台的中心轴线位于在压力控制阀的阀开度的实际使用区域上形成的压力控制阀的开口区域内。

公开(公告)号：US20070264441A1

公开(公告)日：2007-11-15

申请号：US10589272

申请日：2005-02-15

申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

IPC分类号： C08F2/46 ,  C23C16/00

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.

摘要翻译： 通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。 在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与 透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。 在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。

公开(公告)号：US20070221130A1

公开(公告)日：2007-09-27

申请号：US11597523

申请日：2005-05-23

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： C23C16/44

CPC分类号： C23C16/4401 ,  C23C16/4412 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862

摘要： The present invention has the object of improving the efficiency of cleaning in a substrate processing apparatus. Thus, the present invention uses a substrate processing apparatus, comprising: a processing vessel holding therein a substrate to be processed; gas supply means for supplying a gas for processing into said processing vessel; a stage provided in the processing vessel for holding said substrate to be processed; a shielding plate dividing a space inside said processing vessel into a first space and a second space, wherein there are provided: a first evacuation path for evacuating said first space; and a second evacuation path for evacuating said second space.

摘要翻译： 本发明的目的是提高基板处理装置中的清洁效率。 因此，本发明使用基板处理装置，其包括：处理容器，在其中容纳待处理的基板; 用于将气体供给到所述处理容器中的气体供给装置; 设置在处理容器中用于保持待处理的基板的台阶; 将所述处理容器内的空间分割成第一空间和第二空间的遮蔽板，其特征在于，具备：排出所述第一空间的第一排出路径; 以及用于排出所述第二空间的第二抽空路径。

公开(公告)号：US20070240979A1

公开(公告)日：2007-10-18

申请号：US11577198

申请日：2005-09-27

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： C23C14/00

CPC分类号： C23C16/4404 ,  H01J37/32477 ,  H01J37/32522

摘要： A vacuum processing apparatus using a shield member that is used in a processing chamber of the vacuum processing apparatus, that has a heating unit and that has a simple structure enabling the shield member to be thinned. A vacuum processing apparatus having a processing chamber, a gas exhaust unit for discharging gas in processing space inside the processing chamber, a support base for holding a substrate to be processed, and a shield member placed inside the processing chamber. The shield member has an outer wall structure exposed to the processing space that is located inside the processing chamber and is reduced in pressure, inner space formed inside the outer wall structure and isolated from the processing space, and a heating unit placed in the inner space and heating the outer wall structure. The inner space is communicated with the outside of the vacuum processing chamber, and the heating unit is constructed so as to extend into the inner space in a sheet-like form.

摘要翻译： 一种真空处理装置，其使用在真空处理装置的处理室中使用的屏蔽构件，该真空处理装置具有加热单元，并且具有能够使屏蔽构件变薄的简单结构。 一种真空处理装置，具有处理室，用于在处理室内的处理空间中排出气体的排气单元，用于保持待处理基板的支撑基座和放置在处理室内的屏蔽构件。 屏蔽部件具有暴露于处理空间的外壁结构，该外壁结构位于处理室内部并且压力减小，形成在外壁结构内部并与处理空间隔离的内部空间，以及放置在内部空间中的加热单元 并加热外壁结构。 内部空间与真空处理室的外部连通，加热单元被构造成以片状的形式延伸到内部空间。

公开(公告)号：US20070163502A1

公开(公告)日：2007-07-19

申请号：US10585408

申请日：2004-12-24

申请人： Toshihisa Nozawa ,  Osamu Morita ,  Tamaki Yuasa ,  Koji Kotani

发明人： Toshihisa Nozawa ,  Osamu Morita ,  Tamaki Yuasa ,  Koji Kotani

IPC分类号： C23C16/00 ,  C23C14/00 ,  B05C11/00

CPC分类号： H01L21/67109 ,  C23C16/4411 ,  H01J37/32522 ,  H01L21/67069

摘要： In a substrate processing apparatus for processing a substrate for manufacturing a semiconductor device, a mist passage (5) is formed to pass through a part of a processing vessel (2) as an object to be cooled. There are disposed a mist generator (64) that generates a mist, and a gas supply source (62) that supplies a carrier gas for carrying the generated mist. A temperature of the part to be cooled is detected by a temperature sensor (49). When the detected temperature exceeds a predetermined temperature, a water mist, for example, is allowed to flow into the mist passage so as to cool the processing vessel by a heat of evaporation of the mist. Thus, the temperature of the processing vessel can be promptly lowered, and thus a plasma process can be performed under an atmosphere of a stable temperature.

摘要翻译： 在用于制造半导体器件用基板的基板处理装置中，形成有通过作为待冷却对象的处理容器（2）的一部分的雾通路（5）。 设置有产生雾气的雾化器（64）和供给用于承载所产生的雾的载气的气体供给源（62）。 待冷却部件的温度由温度传感器（49）检测。 当检测到的温度超过预定温度时，例如允许水雾流入雾气通道，以便通过雾气的蒸发热来冷却处理容器。 因此，能够迅速降低处理容器的温度，能够在稳定的温度的气氛下进行等离子体处理。

公开(公告)号：US20070137575A1

公开(公告)日：2007-06-21

申请号：US10578184

申请日：2004-11-02

申请人： Tadahiro Ohmi ,  Toshihisa Nozawa ,  Osamu Morita ,  Tamaki Yuasa ,  Koji Kotani

发明人： Tadahiro Ohmi ,  Toshihisa Nozawa ,  Osamu Morita ,  Tamaki Yuasa ,  Koji Kotani

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32192 ,  C23C16/4411 ,  C23C16/45572 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32724

摘要： The present invention has an object of improving the cooling efficiency of the process gas supply part of a plasma processor and thereby suppressing an increase in the temperature of the process gas supply part. Therefore, used in the present invention is a plasma processor having a processing vessel having a holder holding a substrate to be processed, a microwave antenna provided on the processing vessel so as to oppose the substrate to be processed, and a processing gas supply part provided between the substrate to be processed on the holder and the microwave antenna so as to oppose the substrate to be processed, characterized in that the process gas supply part has multiple first openings through which plasma formed in the processing vessel passes, a process gas channel connectable to a process gas source, multiple second openings communicating with the process gas channel, and a cooling medium channel through which a cooling medium cooling the process gas supply part flows, wherein the cooling medium includes mist.

摘要翻译： 本发明的目的是提高等离子体处理器的处理气体供给部的冷却效率，从而抑制处理气体供给部的温度上升。 因此，本发明中使用的是具有处理容器的等离子体处理容器，该处理容器具有保持待处理基板的保持器，设置在处理容器上的与要处理的基板相对的微波天线，以及设置有处理气体供给部 在待加工的基板与微波天线之间，以与待处理的基板相对，其特征在于，处理气体供给部具有多个第一开口，处理容器中形成的等离子体通过该第一开口，可连接的处理气体通道 处理气体源，与处理气体通道连通的多个第二开口以及冷却介质通道，冷却介质冷却工艺气体供应部分，冷却介质包括雾。