发明申请
- 专利标题： FORMING ABRUPT SOURCE DRAIN METAL GATE TRANSISTORS
- 专利标题（中）： 形成破裂源排水金属栅极晶体管
-
申请号： US12713432申请日： 2010-02-26
-
公开(公告)号： US20100151669A1公开(公告)日： 2010-06-17
- 发明人: Nick Lindert , Suman Datta , Jack Kavalieros , Mark L. Doczy , Matthew V. Metz , Justin K. Brask , Robert S. Chau , Mark Bohr , Anand S. Murthy
- 申请人： Nick Lindert , Suman Datta , Jack Kavalieros , Mark L. Doczy , Matthew V. Metz , Justin K. Brask , Robert S. Chau , Mark Bohr , Anand S. Murthy
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A gate structure may be utilized as a mask to form source and drain regions. Then the gate structure may be removed to form a gap and spacers may be formed in the gap to define a trench. In the process of forming a trench into the substrate, a portion of the source drain region is removed. Then the substrate is filled back up with an epitaxial material and a new gate structure is formed thereover. As a result, more abrupt source drain junctions may be achieved.
公开/授权文献
- US07951673B2 Forming abrupt source drain metal gate transistors 公开/授权日：2011-05-31
信息查询
IPC分类:
