发明申请
US20100155743A1 SiC SEMICONDUCTOR DEVICE WITH SELF-ALIGNED CONTACTS, INTEGRATED CIRCUIT AND MANUFACTURING METHOD
有权
具有自对准接触器的SiC半导体器件，集成电路和制造方法
- 专利标题： SiC SEMICONDUCTOR DEVICE WITH SELF-ALIGNED CONTACTS, INTEGRATED CIRCUIT AND MANUFACTURING METHOD
- 专利标题（中）： 具有自对准接触器的SiC半导体器件，集成电路和制造方法
-
申请号： US12341370申请日： 2008-12-22
-
公开(公告)号： US20100155743A1公开(公告)日： 2010-06-24
- 发明人: Michael Treu , Kathrin Rueschenschmidt , Oliver Haeberlen , Franz Auerbach
- 申请人： Michael Treu , Kathrin Rueschenschmidt , Oliver Haeberlen , Franz Auerbach
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/04
摘要：
One aspect includes a semiconductor device with self-aligned contacts, integrated circuit and manufacturing method. One embodiment provides gate control structures. Each of the gate control structures is configured to control the conductivity of a channel region within a silicon carbide substrate by field effect. A contact hole is self-aligned to opposing sidewalls of adjacent gate control structures by intermediate spacers.
公开/授权文献
信息查询
IPC分类:
