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1.发明授权SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method 有权具有自对准触点的SiC半导体器件，集成电路和制造方法公开(公告)号：US08188482B2
公开(公告)日：2012-05-29
申请号：US12341370
申请日：2008-12-22
IPC分类号： H01L29/12
CPC分类号： H01L29/1608 , H01L29/1058 , H01L29/1066 , H01L29/66068 , H01L29/66901 , H01L29/66909 , H01L29/808 , H01L29/8083
摘要： One aspect includes a semiconductor device with self-aligned contacts, integrated circuit and manufacturing method. One embodiment provides gate control structures. Each of the gate control structures is configured to control the conductivity of a channel region within a silicon carbide substrate by field effect. A contact hole is self-aligned to opposing sidewalls of adjacent gate control structures by intermediate spacers.
摘要翻译： 一个方面包括具有自对准触点的半导体器件，集成电路和制造方法。 一个实施例提供了门控制结构。 每个栅极控制结构被配置为通过场效应来控制碳化硅衬底内的沟道区的导电性。 接触孔通过中间间隔件自对准到相邻栅极控制结构的相对侧壁。
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2.发明申请SiC SEMICONDUCTOR DEVICE WITH SELF-ALIGNED CONTACTS, INTEGRATED CIRCUIT AND MANUFACTURING METHOD 有权具有自对准接触器的SiC半导体器件，集成电路和制造方法公开(公告)号：US20100155743A1
公开(公告)日：2010-06-24
申请号：US12341370
申请日：2008-12-22
CPC分类号： H01L29/1608 , H01L29/1058 , H01L29/1066 , H01L29/66068 , H01L29/66901 , H01L29/66909 , H01L29/808 , H01L29/8083
摘要： One aspect includes a semiconductor device with self-aligned contacts, integrated circuit and manufacturing method. One embodiment provides gate control structures. Each of the gate control structures is configured to control the conductivity of a channel region within a silicon carbide substrate by field effect. A contact hole is self-aligned to opposing sidewalls of adjacent gate control structures by intermediate spacers.
摘要翻译： 一个方面包括具有自对准触点的半导体器件，集成电路和制造方法。 一个实施例提供了门控制结构。 每个栅极控制结构被配置为通过场效应来控制碳化硅衬底内的沟道区的导电性。 接触孔通过中间间隔件自对准到相邻栅极控制结构的相对侧壁。
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