发明申请
- 专利标题： RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
- 专利标题（中）： 耐蚀组合物及使用其制造集成电路装置的方法
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申请号： US12654742申请日： 2009-12-30
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公开(公告)号： US20100167212A1公开(公告)日： 2010-07-01
- 发明人: Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
- 申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
- 优先权： KR10-2008-0137420 20081230
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; C08L61/00 ; C08L83/00 ; C08K5/3432 ; C08G77/00
摘要：
A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5.
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