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    Method of manufacturing semiconductor device
    5.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08357576B2

    公开(公告)日：2013-01-22

    申请号：US13007096

    申请日：2011-01-14

    申请人： Chong-Kwang Chang ,  Sung-Hon Chi ,  Hong-Jae Shin ,  Yong-Jin Chung ,  Young-Mook Oh ,  Ju-Beom Yi

    发明人： Chong-Kwang Chang ,  Sung-Hon Chi ,  Hong-Jae Shin ,  Yong-Jin Chung ,  Young-Mook Oh ,  Ju-Beom Yi

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823864 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28123 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

    摘要： A method of manufacturing a semiconductor device, the method including providing a semiconductor substrate; forming a gate pattern on the semiconductor substrate such that the gate pattern includes a gate dielectric layer and a sacrificial gate electrode; forming an etch stop layer and a dielectric layer on the semiconductor substrate and the gate pattern; removing portions of the dielectric layer to expose the etch stop layer; performing an etch-back process on the etch stop layer to expose the sacrificial gate electrode; removing the sacrificial gate electrode to form a trench; forming a metal layer on the semiconductor substrate including the trench; removing portions of the metal layer to expose the dielectric layer; and performing an etch-back process on the metal layer to a predetermined target.

    摘要翻译： 一种制造半导体器件的方法，所述方法包括提供半导体衬底; 在所述半导体衬底上形成栅极图案，使得所述栅极图案包括栅极电介质层和牺牲栅电极; 在半导体衬底和栅极图案上形成蚀刻停止层和电介质层; 去除介电层的部分以暴露蚀刻停止层; 在所述蚀刻停止层上执行蚀刻工艺以暴露所述牺牲栅电极; 去除所述牺牲栅电极以形成沟槽; 在包括沟槽的半导体衬底上形成金属层; 去除所述金属层的部分以暴露所述介电层; 以及对所述金属层执行到预定目标的回蚀处理。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20110195550A1

    公开(公告)日：2011-08-11

    申请号：US13007096

    申请日：2011-01-14

    申请人： Chong-Kwang CHANG ,  Sung-Hon Chi ,  Hong-Jae Shin ,  Yong-Jin Chung ,  Young-Mook Oh ,  Ju-Beom Yi

    发明人： Chong-Kwang CHANG ,  Sung-Hon Chi ,  Hong-Jae Shin ,  Yong-Jin Chung ,  Young-Mook Oh ,  Ju-Beom Yi

    IPC分类号： H01L21/8238 ,  H01L21/336

    CPC分类号： H01L21/823864 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28123 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

    摘要： A method of manufacturing a semiconductor device, the method including providing a semiconductor substrate; forming a gate pattern on the semiconductor substrate such that the gate pattern includes a gate dielectric layer and a sacrificial gate electrode; forming an etch stop layer and a dielectric layer on the semiconductor substrate and the gate pattern; removing portions of the dielectric layer to expose the etch stop layer; performing an etch-back process on the etch stop layer to expose the sacrificial gate electrode; removing the sacrificial gate electrode to form a trench; forming a metal layer on the semiconductor substrate including the trench; removing portions of the metal layer to expose the dielectric layer; and performing an etch-back process on the metal layer to a predetermined target.

    摘要翻译： 一种制造半导体器件的方法，所述方法包括提供半导体衬底; 在所述半导体衬底上形成栅极图案，使得所述栅极图案包括栅极电介质层和牺牲栅电极; 在半导体衬底和栅极图案上形成蚀刻停止层和电介质层; 去除介电层的部分以暴露蚀刻停止层; 在所述蚀刻停止层上执行蚀刻工艺以暴露所述牺牲栅电极; 去除所述牺牲栅电极以形成沟槽; 在包括沟槽的半导体衬底上形成金属层; 去除所述金属层的部分以暴露所述介电层; 以及对所述金属层执行到预定目标的回蚀处理。