摘要:
A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5.
摘要:
A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,
摘要:
A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5—Y—SiO1.5)x(SiO2)y(XSiO1.5)z}(OH)e(OR1)f. [Chemical Formula 1]
摘要:
A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
摘要:
A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
摘要:
A resin composition for a transparent encapsulation material, the resin composition including a polysiloxane obtained by copolymerization of a first silicon compound represented by the following Chemical Formula 1 and a second silicon compound including a compound represented by the following Chemical Formula 2,
摘要:
An encapsulation material and an electronic device, the encapsulation material including a resin, the resin including a first polysiloxane including hydrogen bonded with silicon (Si—H) at a terminal end thereof, and a second polysiloxane including an alkenyl group bonded with silicon (Si-Vi) at a terminal end thereof, a phosphor, and a density controlling agent, wherein a weight ratio of the density controlling agent to the phosphor is about 1.5:1 to about 10:1.
摘要:
A resin for an encapsulation material includes a first polysiloxane including hydrogen bound to silicon (Si—H) at its terminal end, and a second polysiloxane including an alkenyl group bound to silicon (Si—Vi) at its terminal end, wherein a ratio (Si—H/Si—Vi) of hydrogen bound to silicon (Si—H) in the first polysiloxane to the alkenyl group bound to silicon (Si—Vi) in the second polysiloxane is about 1 to about 1.
摘要:
A resin for an encapsulation material includes a first polysiloxane including hydrogen bound to silicon (Si—H) at its terminal end, and a second polysiloxane including an alkenyl group bound to silicon (Si-Vi) at its terminal end, wherein a ratio (Si—H/Si-Vi) of hydrogen bound to silicon (Si—H) in the first polysiloxane to the alkenyl group bound to silicon (Si-Vi) in the second polysiloxane is about 1 to about 1.
摘要:
A hybrid siloxane polymer, an encapsulant, and an electronic device, the hybrid siloxane polymer including a linear first siloxane resin including moieties represented by the following Chemical Formulas 1a and 1b, the first siloxane resin including double bonds at both terminal ends thereof, and a second siloxane resin having a reticular structure: