发明申请
- 专利标题： MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME
- 专利标题（中）： 形成含硅膜的材料和含硅绝缘膜及其形成方法
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申请号： US12527327申请日： 2008-02-12
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公开(公告)号： US20100174103A1公开(公告)日： 2010-07-08
- 发明人: Hisashi Nakagawa , Youhei Nobe , Hitoshi Katou , Kenji Ishizuki , Terukazu Kokubo
- 申请人： Hisashi Nakagawa , Youhei Nobe , Hitoshi Katou , Kenji Ishizuki , Terukazu Kokubo
- 申请人地址： JP Minato-Ku
- 专利权人： JSR CORPORATION
- 当前专利权人： JSR CORPORATION
- 当前专利权人地址： JP Minato-Ku
- 优先权： JP2007-033691 20070214
- 国际申请： PCT/JP2008/052264 WO 20080212
- 主分类号： C07F7/18
- IPC分类号： C07F7/18 ; C09D7/00 ; C23C16/00
摘要：
A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R1 to R6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, provided that at least one of R1 to R6 represents a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, and n represents an integer from 0 to 3.