发明申请
- 专利标题: STRUCTURE AND METHOD FOR BACK END OF THE LINE INTEGRATION
- 专利标题(中): 线路整合后端的结构与方法
-
申请号: US12351436申请日: 2009-01-09
-
公开(公告)号: US20100176512A1公开(公告)日: 2010-07-15
- 发明人: Chih-Chao Yang , David Vaclav Horak , Takeshi Nogami , Shom Ponoth
- 申请人: Chih-Chao Yang , David Vaclav Horak , Takeshi Nogami , Shom Ponoth
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/44
摘要:
An improved semiconductor structure consists of interconnects in an upper interconnect level connected to interconnects in a lower interconnect level through use of a conductive protrusion located at the bottom of a via opening in an upper interconnect level, the conductive protrusion extends upward from bottom of the via opening and into the via opening. The improved interconnect structure with the conductive protrusion between the upper and lower interconnects enhances overall interconnect reliability.
公开/授权文献
- US08021974B2 Structure and method for back end of the line integration 公开/授权日:2011-09-20