发明申请
- 专利标题： In-Situ Formed Capping Layer in MTJ Devices
- 专利标题（中）： MTJ设备中的原位成形盖帽层
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申请号： US12756743申请日： 2010-04-08
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公开(公告)号： US20100193891A1公开(公告)日： 2010-08-05
- 发明人: Yung-Hung Wang , Yu-Jen Wang , Mark Juang , Chia-Shiung Tsai
- 申请人： Yung-Hung Wang , Yu-Jen Wang , Mark Juang , Chia-Shiung Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.
公开/授权文献
- US08143683B2 In-situ formed capping layer in MTJ devices 公开/授权日：2012-03-27