发明申请
US20100270508A1 ZIRCONIUM PRECURSORS USEFUL IN ATOMIC LAYER DEPOSITION OF ZIRCONIUM-CONTAINING FILMS
审中-公开
ZIRCONIUM PRECURSORS有用的原子层沉积含有ZIRCONIUM的膜
- 专利标题： ZIRCONIUM PRECURSORS USEFUL IN ATOMIC LAYER DEPOSITION OF ZIRCONIUM-CONTAINING FILMS
- 专利标题（中）： ZIRCONIUM PRECURSORS有用的原子层沉积含有ZIRCONIUM的膜
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申请号： US12643708申请日： 2009-12-21
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公开(公告)号： US20100270508A1公开(公告)日： 2010-10-28
- 发明人: Chongying Xu , Thomas M. Cameron , Bryan C. Hendrix , John N. Gregg
- 申请人： Chongying Xu , Thomas M. Cameron , Bryan C. Hendrix , John N. Gregg
- 申请人地址： US CT Danbury
- 专利权人： ADVANCED TECHNOLOGY MATERIALS, INC.
- 当前专利权人： ADVANCED TECHNOLOGY MATERIALS, INC.
- 当前专利权人地址： US CT Danbury
- 主分类号： H01B1/00
- IPC分类号： H01B1/00 ; C23C18/44 ; C07F7/00 ; B05D5/12
摘要：
Zirconium precursors of the formulae Such precursors are liquids at room temperature, and can be employed in vapor deposition processes such as ALD to form zirconium-containing films, e.g., high k dielectric films on microelectronic device substrates. The zirconium precursors can be stabilized in such vapor deposition processes by thermal stabilization amine additives.