发明申请
- 专利标题： METHOD OF MANUFACTURING SOI SUBSTRATE
- 专利标题（中）： 制造SOI衬底的方法
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申请号： US12762675申请日： 2010-04-19
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公开(公告)号： US20100273310A1公开(公告)日： 2010-10-28
- 发明人: Kazuya HANAOKA , Hideki TSUYA , Masaharu NAGAI
- 申请人： Kazuya HANAOKA , Hideki TSUYA , Masaharu NAGAI
- 申请人地址： JP Kanagawa-ken
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Kanagawa-ken
- 优先权： JP2009-104203 20090422
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step.
公开/授权文献
- US08168481B2 Method of manufacturing SOI substrate 公开/授权日：2012-05-01
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