发明申请
US20100276747A1 Charge trapping layer, method of forming the charge trapping layer, non-volatile memory device using the same and method of fabricating the non-volatile memory device
审中-公开
电荷俘获层，形成电荷俘获层的方法，使用其的非易失性存储器件以及制造非易失性存储器件的方法
- 专利标题： Charge trapping layer, method of forming the charge trapping layer, non-volatile memory device using the same and method of fabricating the non-volatile memory device
- 专利标题（中）： 电荷俘获层，形成电荷俘获层的方法，使用其的非易失性存储器件以及制造非易失性存储器件的方法
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申请号： US12588871申请日： 2009-10-30
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公开(公告)号： US20100276747A1公开(公告)日： 2010-11-04
- 发明人: Jang-Sik Lee , Byeong Hyeok Sohn , Yong Mu Kim , Jeong Hwa Kwon , Hyunjung Shin , Jaegab Lee
- 申请人： Jang-Sik Lee , Byeong Hyeok Sohn , Yong Mu Kim , Jeong Hwa Kwon , Hyunjung Shin , Jaegab Lee
- 优先权： KR10-2009-0038534 20090430
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L29/51 ; H01L21/31 ; H01L21/28
摘要：
Provided is a charge trapping layer which has excellent memory characteristics, a method of forming the charge trapping layer, a nonvolatile memory device using the charge trapping layer, and a method of fabricating the nonvolatile memory device, in which a hybrid nanoparticle which is obtained by mixing a nanoparticle having an excellent programming characteristic with a nanoparticle having an excellent erasing characteristic is used as the charge trapping layer. The charge trapping layer for use in the nanoparticle is discontinuously formed between a tunneling oxide film and a control oxide film, and includes at least two different kinds of numerous nanoparticles.
公开/授权文献
- US3844048A Method and apparatus for stabilizing vehicles 公开/授权日：1974-10-29
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