公开(公告)号：US20100276747A1

公开(公告)日：2010-11-04

申请号：US12588871

申请日：2009-10-30

申请人： Jang-Sik Lee ,  Byeong Hyeok Sohn ,  Yong Mu Kim ,  Jeong Hwa Kwon ,  Hyunjung Shin ,  Jaegab Lee

发明人： Jang-Sik Lee ,  Byeong Hyeok Sohn ,  Yong Mu Kim ,  Jeong Hwa Kwon ,  Hyunjung Shin ,  Jaegab Lee

IPC分类号： H01L29/792 ,  H01L29/51 ,  H01L21/31 ,  H01L21/28

CPC分类号： H01L29/792 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881

摘要： Provided is a charge trapping layer which has excellent memory characteristics, a method of forming the charge trapping layer, a nonvolatile memory device using the charge trapping layer, and a method of fabricating the nonvolatile memory device, in which a hybrid nanoparticle which is obtained by mixing a nanoparticle having an excellent programming characteristic with a nanoparticle having an excellent erasing characteristic is used as the charge trapping layer. The charge trapping layer for use in the nanoparticle is discontinuously formed between a tunneling oxide film and a control oxide film, and includes at least two different kinds of numerous nanoparticles.

摘要翻译： 本发明提供了具有优异的记忆特性的电荷捕获层，形成电荷捕捉层的方法，使用电荷捕获层的非易失性存储器件以及制造非易失性存储器件的方法，其中通过 将具有优异编程特性的纳米颗粒与具有优异擦除特性的纳米颗粒混合使用作为电荷俘获层。 用于纳米颗粒的电荷捕获层在隧道氧化物膜和控制氧化物膜之间不连续地形成，并且包括至少两种不同种类的许多纳米颗粒。