公开(公告)号：US20100276747A1

公开(公告)日：2010-11-04

申请号：US12588871

申请日：2009-10-30

申请人： Jang-Sik Lee ,  Byeong Hyeok Sohn ,  Yong Mu Kim ,  Jeong Hwa Kwon ,  Hyunjung Shin ,  Jaegab Lee

发明人： Jang-Sik Lee ,  Byeong Hyeok Sohn ,  Yong Mu Kim ,  Jeong Hwa Kwon ,  Hyunjung Shin ,  Jaegab Lee

IPC分类号： H01L29/792 ,  H01L29/51 ,  H01L21/31 ,  H01L21/28

CPC分类号： H01L29/792 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881

摘要： Provided is a charge trapping layer which has excellent memory characteristics, a method of forming the charge trapping layer, a nonvolatile memory device using the charge trapping layer, and a method of fabricating the nonvolatile memory device, in which a hybrid nanoparticle which is obtained by mixing a nanoparticle having an excellent programming characteristic with a nanoparticle having an excellent erasing characteristic is used as the charge trapping layer. The charge trapping layer for use in the nanoparticle is discontinuously formed between a tunneling oxide film and a control oxide film, and includes at least two different kinds of numerous nanoparticles.

摘要翻译： 本发明提供了具有优异的记忆特性的电荷捕获层，形成电荷捕捉层的方法，使用电荷捕获层的非易失性存储器件以及制造非易失性存储器件的方法，其中通过 将具有优异编程特性的纳米颗粒与具有优异擦除特性的纳米颗粒混合使用作为电荷俘获层。 用于纳米颗粒的电荷捕获层在隧道氧化物膜和控制氧化物膜之间不连续地形成，并且包括至少两种不同种类的许多纳米颗粒。

公开(公告)号：US06521921B2

公开(公告)日：2003-02-18

申请号：US09851411

申请日：2001-05-08

申请人： Geunbae Lim ,  Yukeun Eugene Pak ,  Jong Up Jeon ,  Hyunjung Shin ,  Young Kuk

发明人： Geunbae Lim ,  Yukeun Eugene Pak ,  Jong Up Jeon ,  Hyunjung Shin ,  Young Kuk

IPC分类号： H01L27148

CPC分类号： G01Q60/30 ,  G11B9/02 ,  G11B9/149 ,  G11B11/007 ,  Y10S977/875

摘要： A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM prove having a source, channel and drain is formed by etching a single crystalline silicon substrate into a V-shaped groove and doping the etching sloping sides at one end of the V-shaped groove with impurities.

公开(公告)号：US06913982B2

公开(公告)日：2005-07-05

申请号：US10336068

申请日：2003-01-02

申请人： Geunbae Lim ,  Yukeun Eugene Pak ,  Jong Up Jeon ,  Hyunjung Shin ,  Young Kuk

发明人： Geunbae Lim ,  Yukeun Eugene Pak ,  Jong Up Jeon ,  Hyunjung Shin ,  Young Kuk

IPC分类号： G01Q70/16 ,  H01L21/331

CPC分类号： G01Q60/30

摘要： A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM probe having a source, channel, and drain is formed by etching a single crystalline silicon substrate into a V-shaped groove and doping the etching sloping sides at one end of the V-shaped groove with impurities.

摘要翻译： 提供了在探针的尖端处具有场效应晶体管（FET）结构的扫描探针显微镜（SPM）的探针和制造探针的方法。 具有源极，沟道和漏极的SPM探针通过将单晶硅衬底蚀刻成V形沟槽并且用杂质在V形沟槽的一端掺杂蚀刻斜面来形成。