- 专利标题: CURRENT-LEVELING ELECTROPLATING/ELECTROPOLISHING ELECTRODE
- 专利标题(中): 电流电镀/电镀电极
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申请号: US12854214申请日: 2010-08-11
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公开(公告)号: US20100314256A1公开(公告)日: 2010-12-16
- 发明人: Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen , Shih-Ho Lin , Chun-Chang Chen
- 申请人: Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen , Shih-Ho Lin , Chun-Chang Chen
- 专利权人: Taiwan Semiconductor Manufacturing Company, LTD.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, LTD.
- 主分类号: C25D5/00
- IPC分类号: C25D5/00 ; H01R43/00 ; C25F3/16 ; C25F3/22
摘要:
A current-leveling electrode for improving electroplating and electrochemical polishing uniformity in the electrochemical plating or electropolishing of metals on a substrate is disclosed. The current-leveling electrode includes a base electrode and at least one sub-electrode carried by the base electrode. The at least one sub-electrode has a width which is less than a width of the base electrode to impart a generally tapered, stepped or convex configuration to the current-leveling electrode.
公开/授权文献
- US08099861B2 Current-leveling electroplating/electropolishing electrode 公开/授权日:2012-01-24
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