公开(公告)号：US20220018036A1

公开(公告)日：2022-01-20

申请号：US17309567

申请日：2019-12-07

申请人： Lam Research Corporation

发明人： Stephen J. Banik, II ,  Justin Oberst ,  Kari Thorkelsson ,  Bryan L. Buckalew ,  Thomas Anand Ponnuswamy

IPC分类号： C25D5/48 ,  H01L23/00 ,  C25F3/02 ,  C25D3/38 ,  C25D5/18 ,  C25D5/02 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  C25F3/22

摘要： Direct copper-copper bonding at low temperatures is achieved by electroplating copper features on a substrate followed by electroplanarizing the copper features. The copper features are electroplated on the substrate under conditions so that nanotwinned copper structures are formed. Electroplanarizing the copper features is performed by anodically biasing the substrate and contacting the copper features with an electrolyte so that copper is electrochemically removed. Such electrochemical removal is performed in a manner so that roughness is reduced in the copper features and substantial coplanarity is achieved among the copper features. Copper features having nanotwinned copper structures, reduced roughness, and better coplanarity enable direct copper-copper bonding at low temperatures.

公开(公告)号：US10253428B2

公开(公告)日：2019-04-09

申请号：US15111268

申请日：2015-06-04

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Tianru Wu ,  Xuefu Zhang ,  Guangyuan Lu ,  Chao Yang ,  Haomin Wang ,  Xiaoming Xie ,  Mianheng Jiang

IPC分类号： C30B25/00 ,  C30B25/18 ,  C23C16/26 ,  C30B29/02 ,  C23C14/16 ,  C23C14/35 ,  C23C14/58 ,  C23C16/02 ,  C23C16/455 ,  C23F17/00 ,  C25D5/50 ,  C25F3/22 ,  C30B25/12 ,  C30B25/16 ,  C25D5/34 ,  C25D7/06 ,  C01B32/186 ,  C22F1/08 ,  C25D3/12

摘要： The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.

公开(公告)号：US10214798B2

公开(公告)日：2019-02-26

申请号：US15036495

申请日：2013-11-15

申请人： Massachusetts Institute of Technology

发明人： Christopher Schuh ,  Stian Melhus Ueland

IPC分类号： C22C9/01 ,  C22C9/04 ,  C22F1/08 ,  C25F3/22

摘要： In a method for controlling energy damping in a shape memory alloy, provided is a shape memory alloy having a composition including at least one of: Cu in at least about 10 wt. %, Fe in at least about 5 wt. %, Au in at least about 5 wt. %, Ag in at least about 5 wt. %, Al in at least about 5 wt. %, In in at least about 5 wt. %, Mn in at least about 5 wt. %, Zn in at least about 5 wt. % and Co in at least about 5 wt. %. The shape memory alloy is configured into a structure including a structural feature having a surface roughness and having a feature extent that is greater than about 1 micron and less than about 1 millimeter. Energy damping of the structural feature is modified by exposing the structural feature to process conditions that alter the surface roughness of the structural feature.

公开(公告)号：US07807039B2

公开(公告)日：2010-10-05

申请号：US10556291

申请日：2004-04-30

申请人： Siegfried Piesslinger-Schweiger ,  Razmik Abedian ,  Olaf Böhme

发明人： Siegfried Piesslinger-Schweiger ,  Razmik Abedian ,  Olaf Böhme

IPC分类号： C25F3/22 ,  C25F3/26

CPC分类号： C25F3/26

摘要： The present invention relates to electrolytes for electrochemically polishing workpieces consisting of titanium, titanium alloys, niobium, niobium alloys, tantalum and tantalum alloys, which electrolytes contain sulfuric acid, ammonium bifluoride and at least one hydroxycarboxylic acid, and a method for electrochemical polishing.

摘要翻译： 本发明涉及用于电化学抛光由钛，钛合金，铌，铌合金，钽和钽合金组成的工件的电解质，该电解质含有硫酸，二氟化铵和至少一种羟基羧酸，以及电化学抛光方法。

公开(公告)号：US3419485A

公开(公告)日：1968-12-31

申请号：US55593166

申请日：1966-06-03

申请人： ATOMIC ENERGY COMMISSION USA

发明人： ROBERT SEEGMILLER ,  GORE JAMES K

IPC分类号： C25F3/22

CPC分类号： C25F3/22

公开(公告)号：US2820750A

公开(公告)日：1958-01-21

申请号：US34467053

申请日：1953-03-25

申请人： ALLAN CHARLESWORTH PERCY

发明人： ALLAN CHARLESWORTH PERCY

IPC分类号： C25F3/22

CPC分类号： C25F3/22

公开(公告)号：US2753301A

公开(公告)日：1956-07-03

申请号：US26611252

申请日：1952-01-11

申请人： DOW CHEMICAL CO

发明人： BERSWORTH FREDERICK C ,  ATWOOD RICHARD F ,  BICKNELL NEWELL J

IPC分类号： C25F3/22

CPC分类号： C25F3/22

公开(公告)号：US2674571A

公开(公告)日：1954-04-06

申请号：US23555651

申请日：1951-07-06

申请人： NOBILIUM PROC INC

发明人： PROSEN EMIL M

IPC分类号： A61C3/06 ,  A61K6/04 ,  C25F3/22

CPC分类号： C25F3/22 ,  A61C3/06

公开(公告)号：US2610143A

公开(公告)日：1952-09-09

申请号：US72745247

申请日：1947-02-08

申请人： ONEIDA LTD

发明人： EATON SAMUEL E

IPC分类号： C25F3/22

CPC分类号： C25F3/22 ,  Y10T428/12993

公开(公告)号：US2549737A

公开(公告)日：1951-04-17

申请号：US68479646

申请日：1946-07-19

申请人： CONN LTD C G

发明人： WIESNER HAROLD J

IPC分类号： C25F3/22

CPC分类号： C25F3/22