发明申请
- 专利标题： Shield Contacts in a Shielded Gate MOSFET
- 专利标题（中）： 屏蔽栅极MOSFET中的屏蔽触点
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申请号： US12509379申请日： 2009-07-24
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公开(公告)号： US20110018059A1公开(公告)日： 2011-01-27
- 发明人: Dixie Dunn , Paul Thorup , Dean E. Probst , Michael D. Gruenhagen
- 申请人： Dixie Dunn , Paul Thorup , Dean E. Probst , Michael D. Gruenhagen
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
A semiconductor structure comprises an active region comprising trenches extending into a semiconductor region. Each trench includes a shield electrode and a gate electrode. The semiconductor structure also comprises a shield contact region adjacent to the active region. The shield contact region comprises at least one contact trench extending into the semiconductor region. The shield electrode from at least one of the trenches in the active region extends along a length of the contact trench. The semiconductor structure also comprises an interconnect layer extending over the active region and the shield contact region. In the active region the interconnect layer is isolated from the gate electrode in each trench by a dielectric layer and contacts mesa surfaces of the semiconductor region adjacent to the trenches. In the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench.
公开/授权文献
- US07952141B2 Shield contacts in a shielded gate MOSFET 公开/授权日：2011-05-31
信息查询
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