Invention Application
US20110045205A1 Device and Process for Very High-Frequency Plasma-Assisted CVD under Atmospheric Pressure, and Applications Thereof
审中-公开
在大气压下进行超高频等离子体辅助CVD的器件和工艺及其应用
- Patent Title: Device and Process for Very High-Frequency Plasma-Assisted CVD under Atmospheric Pressure, and Applications Thereof
- Patent Title (中): 在大气压下进行超高频等离子体辅助CVD的器件和工艺及其应用
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Application No.: US12679239Application Date: 2008-09-16
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Publication No.: US20110045205A1Publication Date: 2011-02-24
- Inventor: Jean-Christophe Rostaing , Daniel Guerin , Frederic Noel , Helene Daniel
- Applicant: Jean-Christophe Rostaing , Daniel Guerin , Frederic Noel , Helene Daniel
- Applicant Address: FR Paris
- Assignee: L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
- Current Assignee: L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
- Current Assignee Address: FR Paris
- Priority: FR0757720 20070920
- International Application: PCT/FR2008/051660 WO 20080916
- Main IPC: C23C16/511
- IPC: C23C16/511 ; C23C16/50 ; C23C16/42 ; C23C16/00 ; C23C16/40
Abstract:
The invention relates to a method for CVD on a substrate under atmospheric pressure, characterized in that it is assisted by a very-high-frequency plasma generated by a field applicator with an elongated conductor of the micro-ribbon or hollow conducting line type. The invention also relates to the use thereof for applying an electrically conductive inorganic layer on elements of vehicle bodywork, particularly the bumpers.
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