发明申请
US20110110840A1 METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL
审中-公开
生产III族氮化物晶体和III族氮化物晶体的方法
- 专利标题： METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL
- 专利标题（中）： 生产III族氮化物晶体和III族氮化物晶体的方法
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申请号： US13054373申请日： 2009-06-26
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公开(公告)号： US20110110840A1公开(公告)日： 2011-05-12
- 发明人: Michimasa Miyanaga , Naho Mizuhara , Keisuke Tanizaki , Issei Satoh , Hideaki Nakahata , Satoshi Arakawa , Yoshiyuki Yamamoto , Takashi Sakurada
- 申请人： Michimasa Miyanaga , Naho Mizuhara , Keisuke Tanizaki , Issei Satoh , Hideaki Nakahata , Satoshi Arakawa , Yoshiyuki Yamamoto , Takashi Sakurada
- 申请人地址： JP Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD
- 当前专利权人地址： JP Osaka
- 优先权： JP2008-186210 20080717; JP2009-121080 20090519
- 国际申请： PCT/JP2009/061699 WO 20090626
- 主分类号： C30B29/40
- IPC分类号： C30B29/40 ; C30B23/02 ; C30B23/06 ; C01B21/06
摘要：
A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal 13 includes the following steps: A underlying substrate 11 having a major surface 11a tilted toward the direction with respect to the (0001) plane is prepared. The group III-nitride crystal 13 is grown by vapor-phase epitaxy on the major surface 11a of the underlying substrate 11. The major surface 11a of the underlying substrate 11 is preferably a plane tilted at an angle of −5° to 5° from the {01-10} plane.
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