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    METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
    6.
    发明申请
    METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE 有权
    制备氮化物基质和氮化物基质的方法

    公开(公告)号：US20110156213A1

    公开(公告)日：2011-06-30

    申请号：US13061307

    申请日：2009-08-26

    申请人： Satoshi Arakawa ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    发明人： Satoshi Arakawa ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L21/02021 ,  C30B25/00 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02013 ,  H01L21/02389

    摘要： A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.

    摘要翻译： 制造氮化物衬底的方法包括以下步骤。 首先，生长氮化物晶体。 然后，从氮化物晶体切割包括前表面的氮化物衬底。 在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。 当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过 通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。

    Method of manufacturing nitride substrate, and nitride substrate
    7.
    发明授权
    Method of manufacturing nitride substrate, and nitride substrate 有权
    氮化物衬底和氮化物衬底的制造方法

    公开(公告)号：US08829658B2

    公开(公告)日：2014-09-09

    申请号：US13061307

    申请日：2009-08-26

    申请人： Satoshi Arakawa ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    发明人： Satoshi Arakawa ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    IPC分类号： H01L29/04 ,  C30B25/00 ,  C30B29/40 ,  C30B33/00

    CPC分类号： H01L21/02021 ,  C30B25/00 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02013 ,  H01L21/02389

    摘要： A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.

    摘要翻译： 制造氮化物衬底的方法包括以下步骤。 首先，生长氮化物晶体。 然后，从氮化物晶体切割包括前表面的氮化物衬底。 在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。 当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过 通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20100120231A1

    公开(公告)日：2010-05-13

    申请号：US12529073

    申请日：2009-02-12

    申请人： Hiroyuki Kitabayashi ,  Koji Katayama ,  Satoshi Arakawa

    发明人： Hiroyuki Kitabayashi ,  Koji Katayama ,  Satoshi Arakawa

    IPC分类号： H01L21/20 ,  H01L21/28

    CPC分类号： H01L21/3081 ,  H01S5/0425 ,  H01S5/2086

    摘要： A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a material having a lower etching rate than that of the material constituting the Al film, a step (S50) of partially removing the Al film and the GaN-based semiconductor layer using the mask layer as a mask to form a ridge portion, a step (S60) of retracting the positions of the side walls at the ends of the Al film from the positions of the side walls of the mask layer, a step (S70) of forming a protection film composed of a material having a lower etching rate than that of the material constituting the Al film on the side surfaces of the ridge portion and on the upper surface of the mask layer, and a step (S80) of removing the Al film to remove the mask layer and the protection film formed on the upper surface of the mask layer.

    摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：形成GaN基半导体层的步骤（S10），在GaN基半导体层上形成Al膜的步骤（S20）， 形成由具有比构成Al膜的材料的蚀刻速率低的材料构成的掩模层的步骤（S30，S40）;使用该步骤（S50）部分地除去Al膜和GaN基半导体层 掩模层作为掩模以形成脊部;步骤（S60），从掩模层的侧壁的位置缩回Al膜的端部处的侧壁的位置，形成步骤（S70） 由掩模层的侧表面和掩模层的上表面上的蚀刻速率低于构成Al膜的材料的蚀刻速率低的材料形成的保护膜，以及除去Al膜的步骤（S80） 以去除掩模层和形成的保护膜 n掩模层的上表面。