摘要:
In an SOFC, a solid electrolyte layer and an anode are integrated with each other to provide an electrolyte layer-anode assembly. The anode contains a nickel element and a first proton conductor. The first proton conductor is composed of a first perovskite oxide having proton conductivity. The first perovskite oxide has an AXO3-type crystal structure, the A-site containing Ba, the X-site containing Y and at least one selected from the group consisting of Zr and Ce. The nickel element is at least partially in the form of NiO. The anode has a porosity Pa of 10% or more by volume when INi/INiO≤0.1, where INi/INiO denotes a relative intensity ratio of the peak intensity INi of metallic Ni to the peak intensity INiO of the NiO in an XRD spectrum of the anode.
摘要:
The substrate for a printed circuit board according to an embodiment of the present invention includes a base film having insulating properties, and a metal layer stacked on at least one surface of the base film, in which the base film includes a portion where a transition metal in group 10 of the periodic table is present. The transition metal in group 10 is preferably nickel or palladium. The portion where the transition metal in group 10 is present preferably includes a region having an average thickness of 500 nm and extending from an interface with the metal layer.
摘要:
There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.8 g/cm3 and equal to or lower than 7.2 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %. There are also provided a method for manufacturing the oxide sintered body, a sputtering target including the oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.
摘要翻译:提供了包括铟,钨和锌的氧化物烧结体,其中氧化物烧结体包括双键型晶相作为主要成分,其表观密度高于6.8g / cm 3且等于或低于7.2g / cm 3时,钨的总含量为铟,钨,锌的含有率高于0.5原子%以上且1.2原子%以下,锌与铟,钨,锌的合计含有率高于 0.5原子%且等于或小于1.2原子%。 还提供了一种用于制造氧化物烧结体的方法,包括氧化物烧结体的溅射靶,以及包括通过使用溅射靶通过溅射法形成的氧化物半导体膜的半导体器件。
摘要:
This power supply unit includes: an AC path from an input end to an output end; a first voltage sensor configured to detect an input voltage at the input end; a second voltage sensor configured to detect an output voltage at the output end; a bidirectional inverter connected to the AC path; a storage battery connected to the AC path via the bidirectional inverter; an AC switch provided between the input end and a point at which the bidirectional inverter is connected to the AC path; and a control unit configured such that, in a state in which the AC switch is controlled to be opened, if current conduction via the AC switch is detected on the basis of an operation state of the bidirectional inverter, the input voltage, and the output voltage, the control unit determines that the AC switch has failed, and stops the bidirectional inverter.
摘要:
The present invention provides a core piece and a reactor that have excellent bondability to a resin portion and are capable of reducing the generation of eddy currents. The core piece is a core piece that constitutes a magnetic core disposed within or outside a coil formed of a wound wire, the core piece including an end surface that is orthogonal to a magnetic flux flowing through the coil and to which a resin portion is bonded, wherein the end surface has an intersecting groove in which a plurality of grooves intersect without forming a loop. The core piece may be, for example, a powder compact made of metal particles and an insulating material present between the metal particles. The core piece may constitute, for example, a portion of the magnetic core, the portion being disposed within the coil.
摘要:
A silicon carbide semiconductor device includes: a silicon carbide substrate; a first silicon carbide layer disposed on the silicon carbide substrate; a second silicon carbide layer disposed on the first silicon carbide layer; a third silicon carbide layer disposed on the second silicon carbide layer; a fourth silicon carbide layer disposed on the third silicon carbide layer; and a first impurity region formed to extend through the second silicon carbide layer, the third silicon carbide layer and the fourth silicon carbide layer. A trench is formed in the silicon carbide semiconductor device. The silicon carbide semiconductor device includes: a gate insulating film in contact with a wall of the trench; a gate electrode; a second impurity region disposed below the trench; a third impurity region formed below the first impurity region; and a fourth impurity region formed between the second impurity region and the third impurity region.
摘要:
Provided is an in-vehicle power supply device that is less susceptible to the occurrence of sneak current between a main battery and a sub-battery that supply power externally. The in-vehicle power supply device includes a main battery for in-vehicle use, a sub-battery for in-vehicle use, a switch, a main power supply path, a sub-power supply path, a relay, and wiring. The switch has a first end connected to the main battery and the main power supply path, and a second end connected to the sub-battery. The relay has a first contact connected to a sub-power supply path, and a second contact connected to the second end. The first contact and the second contact form a pair. The wiring is a connection path that connects the first end and the first contact, and supplies power from the main battery to the sub-power supply path.
摘要:
Provided is a power system that is able to readily address design changes, together with suppressing leakage current from a conduction path of a high voltage to a conduction path of a low voltage. A power system is provided with a voltage transformation device that steps down an input voltage to a 12V voltage that is lower than the 48V voltage and outputs the resultant voltage, a high-voltage power box that is electrically connected to the voltage transformation device and outputs electric power having a voltage of 48V, and a low-voltage power box that is electrically connected to the voltage transformation device and outputs electric power having a voltage of 12V, the voltage transformation device and the high-voltage power box being detachably connected to each other.
摘要:
A cell frame includes a bipolar plate in contact with an electrode constituting a battery cell; and a frame body surrounding a periphery of the bipolar plate, wherein the frame body includes a liquid supply manifold through which an electrolyte is supplied into the battery cell, the bipolar plate includes, in a surface facing the electrode, a plurality of main groove portions that are arranged adjacent to one another and through which the electrolyte flows, at least one of the frame body and the bipolar plate includes a supply flow directing portion configured to distribute, in a direction in which the main groove portions are arranged adjacent to one another, the electrolyte supplied through the liquid supply manifold, to supply the electrolyte to each of the main groove portions, and each of widths Wi of electrolyte inlets of the main groove portions, and a width Wr of the supply flow directing portion in a direction orthogonal to the direction in which the main groove portions are arranged adjacent to one another, satisfy a width ratio Wr/Wi of 1.5 or more and 10 or less.
摘要:
A spot friction welding tool is for performing spot friction welding of a first member and a second member by superposing the first member and the second member and pressing the spot friction welding tool against the first member and the second member from the first member side. Each of the first member and the second member is a steel plate having a tensile strength of not lower than 590 MPa. The spot friction welding tool is rotatable around a rotation axis. The spot friction welding tool includes a column having a shoulder at a tip end thereof, and a cylindrical or truncated conical probe protruding from the shoulder in a direction of extension of the rotation axis.