发明申请
US20110134583A1 METHOD OF PATTERNING A METAL ON A VERTICAL SIDEWALL OF AN EXCAVATED FEATURE, METHOD OF FORMING AN EMBEDDED MIM CAPACITOR USING SAME, AND EMBEDDED MEMORY DEVICE PRODUCED THEREBY
有权
在金属切割特征的垂直平面上绘制金属的方法，使用其形成嵌入式MIM电容器的方法以及生产的嵌入式存储器件
- 专利标题： METHOD OF PATTERNING A METAL ON A VERTICAL SIDEWALL OF AN EXCAVATED FEATURE, METHOD OF FORMING AN EMBEDDED MIM CAPACITOR USING SAME, AND EMBEDDED MEMORY DEVICE PRODUCED THEREBY
- 专利标题（中）： 在金属切割特征的垂直平面上绘制金属的方法，使用其形成嵌入式MIM电容器的方法以及生产的嵌入式存储器件
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申请号： US13028400申请日： 2011-02-16
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公开(公告)号： US20110134583A1公开(公告)日： 2011-06-09
- 发明人: Steve J. Keating , Nick Lindert , Nadia Rahhal-Orabi , Brian Doyle , Satyarth Suri , Swaminathan Sivakumar , Lana Jong , Lin Sha
- 申请人： Steve J. Keating , Nick Lindert , Nadia Rahhal-Orabi , Brian Doyle , Satyarth Suri , Swaminathan Sivakumar , Lana Jong , Lin Sha
- 主分类号： H01G4/00
- IPC分类号： H01G4/00
摘要：
A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
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