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    Transfer apparatus and method for semiconductor process and semiconductor processing system
    6.
    发明授权
    Transfer apparatus and method for semiconductor process and semiconductor processing system 失效
    半导体工艺和半导体处理系统的转移装置和方法

    公开(公告)号：US06845292B2

    公开(公告)日：2005-01-18

    申请号：US10467345

    申请日：2002-01-23

    申请人： Lin Sha ,  Yicheng Li

    发明人： Lin Sha ,  Yicheng Li

    IPC分类号： H01L21/00 ,  H01L21/31 ,  H01L21/68 ,  G06F17/00

    CPC分类号： H01L21/681 ,  H01L21/67259 ,  Y10S414/136 ,  Y10S414/141

    摘要： A transfer apparatus (42) for a semiconductor processing system includes a transfer member (44) having a support portion (48) to place a target substrate (W) thereon, and a drive unit (68) for driving the transfer member (44). A reference mark (54) is disposed adjacent to the support portion (48). The target substrate (W) has optically observable first and second portions (84, 86). A storage section (63) stores a normal image that shows a positional correlation between the reference mark (54) and the first and second portions (84, 86), obtained when the target substrate (W) is placed on the support portion (48) at a normal position. An image pick-up device (62A) takes a detection image that shows a positional correlation between the reference mark (54) and the first and second portions (84, 86), when the transfer member (44) transfers the target substrate (W). An information processing unit (62B) obtains a misalignment amount of the target substrate (W) relative to the normal position, based on the normal image and the detection image.

    摘要翻译： 一种用于半导体处理系统的传送装置（42）包括：传送部件（44），具有用于将目标基板（W）放置在其上的支撑部分（48）;以及用于驱动传送部件（44）的驱动单元（68） 。 参考标记（54）邻近支撑部分（48）设置。 目标衬底（W）具有光学可观察的第一和第二部分（84,86）。 存储部（63）存储表示基准标记（54）与将目标基板（W）放置在支撑部（48）上时获得的第一和第二部分（84,86）之间的位置相关性的正常图像 ）在正常位置。 当传送部件（44）传送目标基板（W）时，图像拾取装置（62A）采用显示参考标记（54）与第一和第二部分（84,86）之间的位置相关性的检测图像 ）。 信息处理单元（62B）基于正常图像和检测图像来获得目标基板（W）相对于正常位置的不对准量。

    Sheet type heat treating device and method for processing semiconductors
    7.
    发明申请
    Sheet type heat treating device and method for processing semiconductors 失效
    片状热处理装置及半导体加工方法

    公开(公告)号：US20050260835A1

    公开(公告)日：2005-11-24

    申请号：US10466113

    申请日：2001-11-27

    申请人： Lin Sha ,  Shou-Qian Shao ,  Yicheng Li

    发明人： Lin Sha ,  Shou-Qian Shao ,  Yicheng Li

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C23C16/56 ,  F27B5/04 ,  F27B5/06 ,  F27B5/13 ,  F27B5/14 ,  F27B5/16 ,  H01L21/00 ,  H01L21/26 ,  H01L21/31 ,  H01L21/316 ,  H01L21/477

    CPC分类号： C23C16/45565 ,  C23C16/481 ,  H01L21/67115 ,  Y10T29/41

    摘要： The single substrate thermal processing apparatus (2) includes a process chamber (5) arranged to accommodate a target substrate (W) and provided with a showerhead (10) disposed on its ceiling. A support member (28) is disposed to support the target substrate (W) so as for it to face the showerhead (10), when the target substrate (W) is subjected to a semiconductor process. A heating lamp (30) is disposed below the support member (28), for radiating light to heat the target substrate (W). The support member (28) and heating lamp (30) are moved up and down together relative to the showerhead (10) by an elevator mechanism (20). The elevator mechanism (20) sets different distances between the showerhead (30) and heating lamp (10), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead (10) to fall in a predetermined range.

    摘要翻译： 单个基板热处理装置（2）包括处理室（5），其布置成容纳目标基板（W）并设置有设置在其天花板上的喷头（10）。 当目标衬底（W）进行半导体处理时，支撑构件（28）设置成支撑目标衬底（W）以使其面向喷头（10）。 加热灯（30）设置在支撑部件（28）的下方，用于照射光以加热目标基板（W）。 支撑构件（28）和加热灯（30）通过电梯机构（20）相对于喷头（10）一起上下移动。 电梯机构（20）根据不同的处理温度设定喷头（30）和加热灯（10）之间的不同距离，从而使喷头（10）的底面的温度变化下降到预定范围 。

    Methods of corrosion prevention and cleaning of copper structures
    8.
    发明申请
    Methods of corrosion prevention and cleaning of copper structures 审中-公开
    铜结构防腐蚀和清洗方法

    公开(公告)号：US20080152812A1

    公开(公告)日：2008-06-26

    申请号：US11644432

    申请日：2006-12-22

    申请人： Ming Fang ,  Steve Keating ,  Vani Thirumala ,  Lin Sha ,  Bruce Beattie

    发明人： Ming Fang ,  Steve Keating ,  Vani Thirumala ,  Lin Sha ,  Bruce Beattie

    IPC分类号： B05D3/00 ,  B08B7/00 ,  C11D7/00

    CPC分类号： C11D3/0073 ,  C11D3/3427 ,  C11D3/43 ,  C11D11/0029

    摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a thin metal-organic layer on a copper structure, wherein the thin metal-organic layer substantially prevents corrosion of the copper structure, and wherein the thin metal-organic layer comprises an organo-copper compound comprising an alkyl group and a thiol group. In addition, methods of applying a high pH cleaning process using a surfactant to improve surface wetting in a low foaming solution is described.

    摘要翻译： 描述形成微电子器件的方法和相关结构。 这些方法可以包括在铜结构上形成薄的金属 - 有机层，其中薄金属 - 有机层基本上防止了铜结构的腐蚀，并且其中薄金属 - 有机层包括含有烷基的有机铜化合物和 硫醇基。 此外，描述了使用表面活性剂施加高pH清洁方法以改善低发泡溶液中的表面润湿性的方法。

    Sheet type heat treating apparatus and method for processing semiconductors
    9.
    发明授权
    Sheet type heat treating apparatus and method for processing semiconductors 失效
    片状热处理装置及半导体加工方法

    公开(公告)号：US07029505B2

    公开(公告)日：2006-04-18

    申请号：US10466113

    申请日：2001-11-27

    申请人： Lin Sha ,  Shou-Qian Shao ,  Yicheng Li

    发明人： Lin Sha ,  Shou-Qian Shao ,  Yicheng Li

    IPC分类号： H01L21/00

    CPC分类号： C23C16/45565 ,  C23C16/481 ,  H01L21/67115 ,  Y10T29/41

    摘要： The single substrate thermal processing apparatus (2) includes a process chamber (5) arranged to accommodate a target substrate (W) and provided with a showerhead (10) disposed on its ceiling. A support member (28) is disposed to support the target substrate (W) so as for it to face the showerhead (10), when the target substrate (W) is subjected to a semiconductor process. A heating lamp (30) is disposed below the support member (28), for radiating light to heat the target substrate (W). The support member (28) and heating lamp (30) are moved up and down together relative to the showerhead (10) by an elevator mechanism (20). The elevator mechanism (20) sets different distances between the showerhead (30) and heating lamp (10), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead (10) to fall in a predetermined range.

    摘要翻译： 单个基板热处理装置（2）包括处理室（5），其布置成容纳目标基板（W）并设置有设置在其天花板上的喷头（10）。 当目标衬底（W）进行半导体处理时，支撑构件（28）设置成支撑目标衬底（W）以使其面向喷头（10）。 加热灯（30）设置在支撑部件（28）的下方，用于照射光以加热目标基板（W）。 支撑构件（28）和加热灯（30）通过电梯机构（20）相对于喷头（10）一起上下移动。 电梯机构（20）根据不同的处理温度设定喷头（30）和加热灯（10）之间的不同距离，从而使喷头（10）的底面的温度变化下降到预定范围 。