Invention Application
US20110170569A1 SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS
审中-公开
具有蚀刻镜的SEMIPOLAR III-NITRIDE激光二极管
- Patent Title: SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS
- Patent Title (中): 具有蚀刻镜的SEMIPOLAR III-NITRIDE激光二极管
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Application No.: US12908478Application Date: 2010-10-20
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Publication No.: US20110170569A1Publication Date: 2011-07-14
- Inventor: Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
- Applicant: Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Main IPC: H01S5/323
- IPC: H01S5/323 ; H01L33/02 ; H01L33/60 ; H01S5/00 ; H01S5/183
Abstract:
A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.
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