发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13084996申请日: 2011-04-12
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公开(公告)号: US20110186949A1公开(公告)日: 2011-08-04
- 发明人: Shunpei YAMAZAKI , Jun KOYAMA , Kiyoshi KATO , Takaaki KOEN , Yuto YAKUBO , Makoto YANAGISAWA , Hisashi OHTANI , Eiji SUGIYAMA , Nozomi HORIKOSHI
- 申请人: Shunpei YAMAZAKI , Jun KOYAMA , Kiyoshi KATO , Takaaki KOEN , Yuto YAKUBO , Makoto YANAGISAWA , Hisashi OHTANI , Eiji SUGIYAMA , Nozomi HORIKOSHI
- 申请人地址: JP Kanagawa-ken
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Kanagawa-ken
- 优先权: JP2007-195497 20070727
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.
公开/授权文献
- US08872331B2 Semiconductor device and method for manufacturing the same 公开/授权日:2014-10-28
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