发明申请
- 专利标题: Alignment System, Lithographic System and Method
- 专利标题(中): 对准系统,光刻系统和方法
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申请号: US13000443申请日: 2009-07-03
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公开(公告)号: US20110196646A1公开(公告)日: 2011-08-11
- 发明人: Everhardus Mos , Henricus Johannes Lamberttus Megens , Maurits Van Der Schaar , Hubertus Johannes Gertrudus Simons , Scott Anderson Middlebrooks
- 申请人: Everhardus Mos , Henricus Johannes Lamberttus Megens , Maurits Van Der Schaar , Hubertus Johannes Gertrudus Simons , Scott Anderson Middlebrooks
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 国际申请: PCT/EP09/58404 WO 20090703
- 主分类号: G06F15/00
- IPC分类号: G06F15/00 ; G03B27/54
摘要:
A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.
公开/授权文献
- US08706442B2 Alignment system, lithographic system and method 公开/授权日:2014-04-22
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