摘要:
A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.
摘要:
A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region, hereby reducing the intra-field overlay errors.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
摘要:
A scatterometer configured to measure a property of a substrate, includes a radiation source configured to provide a radiation beam; and a detector configured to detect a spectrum of the radiation beam reflected from a target (30) on the surface of the substrate (W) and to produce a measurement signal representative of the spectrum. The apparatus includes a beam shaper (51, 53) interposed in the radiation path between the radiation source and the detector, the beam shaper being configured to adjust the cross section of the beam dependent on the shape and/or size of the target.
摘要:
A lithographic system includes a lithographic apparatus and a scatterometer. In an embodiment, the lithographic apparatus includes an illumination optical system arranged to illuminate a pattern and a projection optical system arranged to project an image of the pattern on to a substrate. In an embodiment, the scatterometer includes a measurement system arranged to direct a beam of radiation onto a target pattern on said substrate and to obtain an image of a pupil plane representative of radiation scattered from the target pattern. A computational arrangement represents the pupil plane by moment functions calculated from a pair of orthogonal basis function and correlates the moment function to lithographic feature parameters to build a lithographic system identification. A control arrangement uses the system identification to control subsequent lithographic processes performed by the lithographic apparatus.
摘要:
A method and associated apparatus determine an overlay error on a substrate. A beam is projected onto three or more targets. Each target includes first and second overlapping patterns with predetermined overlay offsets on the substrate. The asymmetry of the radiation reflected from each target on the substrate is measured. The overlay error not resultant from the predetermined overlay offsets is determined. The function that enables calculation of overlay from asymmetry for other points on the wafer is determined by limiting the effect of linearity error when determining the overlay error from the function.