发明申请
US20110223092A1 USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
失效
在III类氮化物晶体的热成长期间使用含硼含量化合物，大分子和流体
- 专利标题： USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
- 专利标题（中）： 在III类氮化物晶体的热成长期间使用含硼含量化合物，大分子和流体
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申请号： US13128092申请日： 2009-11-04
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公开(公告)号： US20110223092A1公开(公告)日： 2011-09-15
- 发明人: Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
- 申请人： Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 国际申请： PCT/US09/63233 WO 20091104
- 主分类号： C30B7/00
- IPC分类号： C30B7/00 ; C01B21/06 ; B01D9/00
摘要：
Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.
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