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    CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL
    4.
    发明申请
    CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL 审中-公开
    控制III-III型氮化物晶体的三元氮化镓晶体的不同暴露晶体生长面积的相对生长速率

    公开(公告)号：US20110209659A1

    公开(公告)日：2011-09-01

    申请号：US13128105

    申请日：2009-11-04

    申请人： Siddha Pimputkar ,  Derrick S. Kamber ,  James S. Speck ,  Shuji Nakamura

    发明人： Siddha Pimputkar ,  Derrick S. Kamber ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： C30B19/10

    CPC分类号： H01L21/0254 ,  C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02609 ,  H01L21/02628 ,  Y10T117/1024

    摘要： A method for controlling the relative and absolute growth rates of all possible crystallographic planes of a group-III nitride crystal during ammonothermal growth. The growth rates of the various exposed crystallographic planes of the group-III nitride crystal are controlled by modifying the environment and/or conditions within the reactor vessel, which may be subdivided into a plurality of separate zones, wherein each of the zones has their own environment and conditions. The environment includes the amount of atoms, compounds and/or chemical complexes within each of the zones, along with their relative ratios and the relative motion of the atoms, compounds and/or chemical complexes within each of the zones and among the zones. The conditions include the thermodynamic properties each of the zones possess, such as temperatures, pressures and/or densities.

    摘要翻译： 一种用于在氨热生长期间控制III族氮化物晶体的所有可能晶面的相对和绝对生长速率的方法。 III族氮化物晶体的各种暴露的结晶平面的生长速率通过改变反应器容器内的环境和/或条件来控制，反应器容器可以细分成多个分开的区域，其中每个区域具有它们自己的区域 环境和条件。 环境包括每个区域内的原子，化合物和/或化学配合物的数量，以及它们的相对比例以及每个区域内和区域之间的原子，化合物和/或化学配合物的相对运动。 条件包括每个区域具有的热力学性质，例如温度，压力和/或密度。