发明申请
- 专利标题： GAS BARRIER FILM AND ORGANNIC DEVICE USING THE SAME
- 专利标题（中）： 气体阻隔膜和使用其的有机装置
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申请号： US13083086申请日： 2011-04-08
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公开(公告)号： US20110262679A1公开(公告)日： 2011-10-27
- 发明人: KAZUFUMI AZUMA , Satoko Ueno , Masayasu Suzuki , Yoshiyuki Konishi , Shinichiro Ishida
- 申请人： KAZUFUMI AZUMA , Satoko Ueno , Masayasu Suzuki , Yoshiyuki Konishi , Shinichiro Ishida
- 申请人地址： JP Kyoto
- 专利权人： SHIMADZU CORPORATION
- 当前专利权人： SHIMADZU CORPORATION
- 当前专利权人地址： JP Kyoto
- 优先权： JP2010-101056 20100426
- 主分类号： B32B3/02
- IPC分类号： B32B3/02 ; C01B21/068 ; C23C16/513
摘要：
A SiNx film as a barrier film is provided. The film is formed at a low process temperature, has a high water vapor barrier performance and a high light transmittance, and is useful for sealing of a substrate formed by a flexible organic material, such as a plastic substrate. A barrier film is formed by silicon nitride (SiNx) having an atom ratio [N/(Si+N)] indicating a ratio of nitrogen N to silicon Si in the range of 0.60 to 0.65, by using a surface wave plasma chemical vapor deposition (CVD) device.
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