公开(公告)号：US20090278060A1

公开(公告)日：2009-11-12

申请号：US12417838

申请日：2009-04-03

申请人： Yukio TANIGUCHI ,  Masakiyo MATSUMURA ,  Takahiko ENDO ,  Kazufumi AZUMA

发明人： Yukio TANIGUCHI ,  Masakiyo MATSUMURA ,  Takahiko ENDO ,  Kazufumi AZUMA

IPC分类号： G21K5/00

CPC分类号： H01L21/0268 ,  B23K26/073 ,  H01L21/02532 ,  H01L27/1285

摘要： A photoirradiation apparatus includes an optical modulation element which phase-modulates light, an illumination system to illuminate the optical modulation element, and an imaging optical system which applies the phase-modulated light to a non-single-crystal semiconductor film to form a predetermined light intensity distribution with a strip-like repetitive region having long sides adjacent to each other. The light intensity distribution has a distribution which is downwards convex along a center line in a short side direction and a center line in a long side direction of the repetitive region. The light intensity distribution includes isointensity lines each bent to form a projection from a center of the repetitive region outward in the long side direction. A radius of curvature of an end of at least one isointensity line is not more than 0.3 μm. A pitch of the repetitive region in the short side direction is not more than 2 μm.

摘要翻译： 光照射装置包括相位调制光的光调制元件，照亮光调制元件的照明系统和将相位调制光施加到非单晶半导体膜以形成预定光的成像光学系统 强度分布与具有彼此相邻的长边的带状重复区域。 光强分布具有沿着短边方向的中心线和重复区域的长边方向的中心线向下凸起的分布。 光强度分布包括每个弯曲成从长边方向外侧的重复区域的中心形成突起的等距线。 至少一条等腰线的端部的曲率半径不大于0.3μm。 短边方向的重复区域的间距不大于2μm。

公开(公告)号：US20080105650A1

公开(公告)日：2008-05-08

申请号：US11969500

申请日：2008-01-04

申请人： Hideo SUGAI ,  Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma

发明人： Hideo SUGAI ,  Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma

IPC分类号： B44C1/22 ,  C23F1/00 ,  H05H1/24 ,  C23C16/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32834

摘要： A plasma processing device reduces the pressure inside a vacuum waveguide which propagates microwave to a vacuum of a high degree, thereby preventing abnormal discharge in the vacuum waveguide and around a slot plate, and reduces the difference in pressure between the processing chamber and the vacuum waveguide, thereby lowering the stress applied on the slot plate and a dielectric member for generating surface plasma, thus carrying out high-quality plasma processing.

摘要翻译： 等离子体处理装置降低真空波导内的压力，将真空波导传播到高真空度，从而防止真空波导和槽板周围的异常放电，并且减小处理室和真空波导之间的压力差 从而降低施加在槽板上的应力和用于产生表面等离子体的电介质构件，从而进行高质量的等离子体处理。

公开(公告)号：US07311796B2

公开(公告)日：2007-12-25

申请号：US10681615

申请日：2003-10-08

申请人： Masashi Goto ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto

发明人： Masashi Goto ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto

IPC分类号： H01L21/306 ,  C23C16/00 ,  C23C14/34

CPC分类号： H01J37/32192 ,  C23C16/511

摘要： A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

摘要翻译： 等离子体处理装置包括：具有至少一个开口并用于产生等离子体的室12; 设置成气密地覆盖开口的电介质部件14; 至少一个波导16，其设置在所述室的外部，使得所述一端侧与所述电介质构件相对; 设置在波导管的另一端侧的电磁波源20; 设置在与波导的电介质构件相对的表面上的多个孔38,40,42,44,46; 以及设置在至少一个所述孔中的孔区域调节装置18，以调节孔的开口面积。

公开(公告)号：US20070034157A1

公开(公告)日：2007-02-15

申请号：US11584566

申请日：2006-10-23

申请人： Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto ,  Masashi Goto

发明人： Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto ,  Masashi Goto

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192

摘要： Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.

摘要翻译： 公开了一种用于执行等离子体处理的等离子体处理装置，包括用于产生电磁波的电磁波源，矩形波导，形成在矩形波导中并构成波导天线的多个槽，电磁波辐射窗， 电介质体和真空室，其中通过电磁波辐射窗通过从槽辐射到真空室中的电磁波产生等离子体，等离子体处理装置被构造成包括用于分配电磁波的电磁波分配波导部分 从电磁波源产生的每个波导的波形，多个波导从电场平面或与电磁波分配波导部分的磁场平面垂直的平面分支。

公开(公告)号：US20060090704A1

公开(公告)日：2006-05-04

申请号：US11259190

申请日：2005-10-27

申请人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

发明人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

IPC分类号： C23C16/00

CPC分类号： H01J37/32238 ,  H01J37/32192

摘要： In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.

摘要翻译： 在等离子体处理装置中，电磁波通过波导管的电介质窗从波导槽从辐射到处理室中，从而产生等离子体。 作为处理对象的基板由所生成的等离子体进行处理。 电介质板连接到与处理室相对的梁的那些表面。 每个电介质板的厚度被设定为电磁波的介电质内波长的1/2以上。 使用等离子体处理装置可以均匀地进行大面积的处理。

公开(公告)号：US20110262679A1

公开(公告)日：2011-10-27

申请号：US13083086

申请日：2011-04-08

申请人： KAZUFUMI AZUMA ,  Satoko Ueno ,  Masayasu Suzuki ,  Yoshiyuki Konishi ,  Shinichiro Ishida

发明人： KAZUFUMI AZUMA ,  Satoko Ueno ,  Masayasu Suzuki ,  Yoshiyuki Konishi ,  Shinichiro Ishida

IPC分类号： B32B3/02 ,  C01B21/068 ,  C23C16/513

CPC分类号： H01L51/5253 ,  C23C16/345 ,  C23C16/511 ,  H01L51/448 ,  Y10T428/23

摘要： A SiNx film as a barrier film is provided. The film is formed at a low process temperature, has a high water vapor barrier performance and a high light transmittance, and is useful for sealing of a substrate formed by a flexible organic material, such as a plastic substrate. A barrier film is formed by silicon nitride (SiNx) having an atom ratio [N/(Si+N)] indicating a ratio of nitrogen N to silicon Si in the range of 0.60 to 0.65, by using a surface wave plasma chemical vapor deposition (CVD) device.

摘要翻译： 提供了作为阻挡膜的SiNx膜。 该薄膜形成在低的工艺温度下，具有高的水蒸气阻隔性能和高透光率，并且可用于密封由柔性有机材料（例如塑料基材）形成的基材。 通过使用表面波等离子体化学气相沉积法，通过氮化硅（SiNx）形成阻挡膜，该氮化硅（SiNx）具有表示氮N与硅Si的比例在0.60至0.65范围内的原子比[N /（Si + N）] （CVD）装置。

公开(公告)号：US08009345B2

公开(公告)日：2011-08-30

申请号：US12962750

申请日：2010-12-08

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

IPC分类号： G02F1/01

CPC分类号： B23K26/066

摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

摘要翻译： 结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。 结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。 光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或 下面。

公开(公告)号：US20100239782A1

公开(公告)日：2010-09-23

申请号：US12792226

申请日：2010-06-02

申请人： Atsushi SASAKI ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

发明人： Atsushi SASAKI ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

IPC分类号： C23C16/513

CPC分类号： H01J37/32192 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/3244

摘要： An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

摘要翻译： 绝缘膜由等离子体膜形成装置形成，该等离子体膜形成装置包括具有电磁波入射面F的真空容器，在该真空容器中形成的第一气体注入孔以及在远离电磁波的真空容器中制造的第二气体注入孔 入射面F比第一个气体注入孔。 例如，从距离电磁波入射面F的距离小于10mm的位置引入第一气体到真空容器中。 从与电磁波入射面的距离为10mm以上的位置向真空容器引入包含有机硅化合物的第二气体。

公开(公告)号：US20090246939A1

公开(公告)日：2009-10-01

申请号：US12397717

申请日：2009-03-04

申请人： Kazufumi AZUMA ,  Hajime Shirai

发明人： Kazufumi AZUMA ,  Hajime Shirai

IPC分类号： H01L21/322

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02686

摘要： A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.

摘要翻译： 一种脱氢处理方法，其特征在于，在非耐热基板的上方形成氢化非晶硅膜，通过向氢化非晶硅膜照射1分钟的时间，从氢化非晶硅膜中除去结合氢 至500 ms。 通过照射大气热等离子体放电，将基板的表面在1000〜2000℃的温度下加热。

公开(公告)号：US20090061603A1

公开(公告)日：2009-03-05

申请号：US12202651

申请日：2008-09-02

申请人： Shigeyuki SHIMOTO ,  Takashi Ono ,  Kazufumi Azuma ,  Masakiyo Matsumura

发明人： Shigeyuki SHIMOTO ,  Takashi Ono ,  Kazufumi Azuma ,  Masakiyo Matsumura

IPC分类号： H01L21/20

CPC分类号： B23K26/073 ,  B23K26/0608 ,  B23K26/0676 ,  H01L21/02532 ,  H01L21/02686 ,  Y10T117/1004

摘要： A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit.

摘要翻译： 一种结晶半导体膜的方法，包括分离从激光振荡器振荡的脉冲激光束，并且在分离脉冲激光束已经通过光路长度不同的光路传播之后合成分割脉冲激光束，将合成脉冲激光束调制成 通过相位调制元件的脉冲激光束，用激光束照射形成在基板上的非单晶膜，使非单晶膜结晶化。 使用至少三个顺序排列的光分裂/合成单元执行脉冲激光束的分离和合成分割脉冲激光束，并且包括通过后续的分割/合成单元顺序地分割由一个光分解/合成单元分割的一个脉冲激光束， 并且将由一个光分解/合成单元分离的另一个脉冲激光束与由前面的分割/合成单元分离的另一个脉冲激光束合成。