发明申请
- 专利标题: Cost-Effective TSV Formation
- 专利标题(中): 成本效益好的TSV形成
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申请号: US12895296申请日: 2010-09-30
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公开(公告)号: US20120083116A1公开(公告)日: 2012-04-05
- 发明人: Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
- 申请人: Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L21/768
- IPC分类号: H01L21/768
摘要:
A device includes a substrate having a first surface, and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the substrate. A dielectric layer is disposed over the substrate. A metal pad is disposed in the dielectric layer and physically contacting the TSV, wherein the metal pad and the TSV are formed of a same material, and wherein no layer formed of a material different from the same material is between and spacing the TSV and the metal pad apart from each other.
公开/授权文献
- US08580682B2 Cost-effective TSV formation 公开/授权日:2013-11-12
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