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公开(公告)号：US08580682B2
公开(公告)日：2013-11-12
申请号：US12895296
申请日：2010-09-30
申请人： Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
发明人： Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/0401 , H01L2224/05025 , H01L2224/13025 , H01L2924/00013 , H01L2924/14 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A device includes a substrate having a first surface, and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the substrate. A dielectric layer is disposed over the substrate. A metal pad is disposed in the dielectric layer and physically contacting the TSV, wherein the metal pad and the TSV are formed of a same material, and wherein no layer formed of a material different from the same material is between and spacing the TSV and the metal pad apart from each other.
摘要翻译： 一种器件包括具有第一表面的衬底和与第一表面相对的第二表面。 贯穿基板通孔（TSV）从基板的第一表面延伸到第二表面。 电介质层设置在衬底上。 金属焊盘设置在电介质层中并物理接触TSV，其中金属焊盘和TSV由相同的材料形成，并且其中由不同于相同材料的材料形成的层不在其间并且使TSV和 金属垫彼此分开。
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公开(公告)号：US20120083116A1
公开(公告)日：2012-04-05
申请号：US12895296
申请日：2010-09-30
申请人： Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
发明人： Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/0401 , H01L2224/05025 , H01L2224/13025 , H01L2924/00013 , H01L2924/14 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A device includes a substrate having a first surface, and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the substrate. A dielectric layer is disposed over the substrate. A metal pad is disposed in the dielectric layer and physically contacting the TSV, wherein the metal pad and the TSV are formed of a same material, and wherein no layer formed of a material different from the same material is between and spacing the TSV and the metal pad apart from each other.
摘要翻译： 一种器件包括具有第一表面的衬底和与第一表面相对的第二表面。 贯穿基板通孔（TSV）从基板的第一表面延伸到第二表面。 电介质层设置在衬底上。 金属焊盘设置在电介质层中并物理接触TSV，其中金属焊盘和TSV由相同的材料形成，并且其中由不同于相同材料的材料形成的层不在其间并且使TSV和 金属垫彼此分开。
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公开(公告)号：US08803316B2
公开(公告)日：2014-08-12
申请号：US13311692
申请日：2011-12-06
申请人： Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
发明人： Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
IPC分类号： H01L23/48
CPC分类号： H01L23/49827 , H01L21/76879 , H01L21/76885 , H01L21/76898 , H01L23/481 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05556 , H01L2224/05558 , H01L2224/0557 , H01L2224/11011 , H01L2224/13025 , H01L2224/131 , H01L2224/1405 , H01L2224/14104 , H01L2224/73204 , H01L2924/01028 , H01L2924/0132 , H01L2924/067 , H01L2924/0705 , H01L2924/181 , H01L2924/00 , H01L2924/014 , H01L2924/00012
摘要： A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
摘要翻译： 一种器件包括具有正面和背面的衬底，从衬底的背面延伸到前侧的通孔，以及位于衬底的背面和通孔上方的导电焊盘。 导电垫具有基本平坦的顶表面。 导电凸块在基本上平坦的顶表面上方具有非平面的顶表面，并且与通孔对准。 导电凸块和导电垫由相同的材料形成。 在导电凸块和导电垫之间不形成界面。
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公开(公告)号：US20130140690A1
公开(公告)日：2013-06-06
申请号：US13311692
申请日：2011-12-06
申请人： Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
发明人： Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L23/49827 , H01L21/76879 , H01L21/76885 , H01L21/76898 , H01L23/481 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05556 , H01L2224/05558 , H01L2224/0557 , H01L2224/11011 , H01L2224/13025 , H01L2224/131 , H01L2224/1405 , H01L2224/14104 , H01L2224/73204 , H01L2924/01028 , H01L2924/0132 , H01L2924/067 , H01L2924/0705 , H01L2924/181 , H01L2924/00 , H01L2924/014 , H01L2924/00012
摘要： A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
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公开(公告)号：US20140077374A1
公开(公告)日：2014-03-20
申请号：US13619233
申请日：2012-09-14
申请人： Yung-Chi Lin , Hsin-Yu Chen , Lin-Chih Huang , Tsang-Jiuh Wu , Wen-Chih Chiou
发明人： Yung-Chi Lin , Hsin-Yu Chen , Lin-Chih Huang , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/528 , H01L21/76898 , H01L23/3114 , H01L23/3171 , H01L23/481 , H01L23/525 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L23/53271 , H01L24/05 , H01L24/13 , H01L27/088 , H01L2224/0401 , H01L2224/05024 , H01L2224/05552 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/13111 , H01L2924/00014 , H01L2924/12042 , H01L2924/13091 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2924/00
摘要： An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.
摘要翻译： 一种装置包括形成在基板中的通孔。 通孔连接在基板的第一侧和第二侧之间。 通孔包括与基板的第二侧相邻的底部，其中底部由导电材料形成。 通孔还包括由导电材料形成的侧壁部分和形成在侧壁部分之间的中间部分，其中中间部分由电介质材料形成。
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公开(公告)号：US09112007B2
公开(公告)日：2015-08-18
申请号：US13619233
申请日：2012-09-14
申请人： Yung-Chi Lin , Hsin-Yu Chen , Lin-Chih Huang , Tsang-Jiuh Wu , Wen-Chih Chiou
发明人： Yung-Chi Lin , Hsin-Yu Chen , Lin-Chih Huang , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L21/44 , H01L21/768 , H01L23/31 , H01L23/48 , H01L23/525 , H01L23/532 , H01L23/00
CPC分类号： H01L23/528 , H01L21/76898 , H01L23/3114 , H01L23/3171 , H01L23/481 , H01L23/525 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L23/53271 , H01L24/05 , H01L24/13 , H01L27/088 , H01L2224/0401 , H01L2224/05024 , H01L2224/05552 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/13111 , H01L2924/00014 , H01L2924/12042 , H01L2924/13091 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2924/00
摘要： An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.
摘要翻译： 一种装置包括形成在基板中的通孔。 通孔连接在基板的第一侧和第二侧之间。 通孔包括与基板的第二侧相邻的底部，其中底部由导电材料形成。 通孔还包括由导电材料形成的侧壁部分和形成在侧壁部分之间的中间部分，其中中间部分由电介质材料形成。
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公开(公告)号：US20130285244A1
公开(公告)日：2013-10-31
申请号：US13457841
申请日：2012-04-27
申请人： Yung-Chi Lin , Wen-Chih Chiou , Yen-Hung Chen , Sylvia Lo , Jing-Cheng Lin
发明人： Yung-Chi Lin , Wen-Chih Chiou , Yen-Hung Chen , Sylvia Lo , Jing-Cheng Lin
IPC分类号： H01L23/48 , H01L21/283
CPC分类号： H01L21/76898 , H01L21/7685 , H01L21/76877 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/0346 , H01L2224/03616 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05025 , H01L2224/05026 , H01L2224/05099 , H01L2224/05155 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05541 , H01L2224/05571 , H01L2224/05599 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05684 , H01L2924/00014 , H01L2924/00012 , H01L2924/207 , H01L2224/05552
摘要： A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below the substrate top surface. A barrier pad is then deposited in the via, and a top TSV pad deposited on the barrier pad. The top TSV barrier pad is polished to bring the top surface of the top TSV pad about level with the substrate. The barrier pad may be less than about 1 microns thick, and the top TSV pad may be less than about 6 microns thick. The barrier pad may be a dissimilar metal from the top and bottom TSV pads, and may be selected from a group comprising titanium, tantalum, cobalt, nickel and the like.
摘要翻译： 公开了一种用于向TSV提供沉积在TSV的顶表面下方的阻挡层的系统和方法，顶表面具有减小的地形变化。 将底部TSV焊盘沉积到通孔中，然后抛光，使得顶表面在衬底顶表面下方。 然后在通孔中沉积阻挡层，并且沉积在阻挡层上的顶部TSV焊盘。 顶部的TSV屏障垫被抛光，以使顶部TSV焊盘的顶部表面与衬底的高度一致。 阻挡垫可以小于约1微米厚，并且顶部TSV垫可以小于约6微米厚。 阻挡垫可以是来自顶部和底部TSV垫的不同金属，并且可以选自包括钛，钽，钴，镍等的组。
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公开(公告)号：US08772945B2
公开(公告)日：2014-07-08
申请号：US13457841
申请日：2012-04-27
申请人： Yung-Chi Lin , Wen-Chih Chiou , Yen-Hung Chen , Sylvia Lo , Jing-Cheng Lin
发明人： Yung-Chi Lin , Wen-Chih Chiou , Yen-Hung Chen , Sylvia Lo , Jing-Cheng Lin
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L21/7685 , H01L21/76877 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/0346 , H01L2224/03616 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05025 , H01L2224/05026 , H01L2224/05099 , H01L2224/05155 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05541 , H01L2224/05571 , H01L2224/05599 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05684 , H01L2924/00014 , H01L2924/00012 , H01L2924/207 , H01L2224/05552
摘要： A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below the substrate top surface. A barrier pad is then deposited in the via, and a top TSV pad deposited on the barrier pad. The top TSV barrier pad is polished to bring the top surface of the top TSV pad about level with the substrate. The barrier pad may be less than about 1 microns thick, and the top TSV pad may be less than about 6 microns thick. The barrier pad may be a dissimilar metal from the top and bottom TSV pads, and may be selected from a group comprising titanium, tantalum, cobalt, nickel and the like.
摘要翻译： 公开了一种用于向TSV提供沉积在TSV的顶表面下方的阻挡层的系统和方法，顶表面具有减小的地形变化。 将底部TSV焊盘沉积到通孔中，然后抛光，使得顶表面在衬底顶表面下方。 然后在通孔中沉积阻挡层，并且沉积在阻挡层上的顶部TSV焊盘。 顶部的TSV屏障垫被抛光，以使顶部TSV焊盘的顶部表面与衬底的高度一致。 阻挡垫可以小于约1微米厚，并且顶部TSV垫可以小于约6微米厚。 阻挡垫可以是来自顶部和底部TSV垫的不同金属，并且可以选自包括钛，钽，钴，镍等的组。
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公开(公告)号：US08432038B2
公开(公告)日：2013-04-30
申请号：US12783973
申请日：2010-05-20
申请人： Weng-Jin Wu , Yung-Chi Lin , Wen-Chih Chiou
发明人： Weng-Jin Wu , Yung-Chi Lin , Wen-Chih Chiou
IPC分类号： H01L23/48
CPC分类号： H01L21/76843 , H01L21/76898 , H01L23/481 , H01L23/525 , H01L24/16 , H01L24/81 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13147 , H01L2224/16 , H01L2924/00013 , H01L2924/00014 , H01L2924/01012 , H01L2924/01025 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/3011 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A through-silicon via (TSV) structure and process for forming the same are disclosed. A semiconductor substrate has a front surface and a back surface, and a TSV structure is formed to extend through the semiconductor substrate. The TSV structure includes a metal layer, a metal seed layer surrounding the metal layer, a barrier layer surrounding the metal seed layer, and a metal silicide layer formed in a portion sandwiched between the metal layer and the metal seed layer.
摘要翻译： 公开了一种贯穿硅通孔（TSV）结构及其形成方法。 半导体衬底具有前表面和后表面，并且形成TSV结构以延伸穿过半导体衬底。 TSV结构包括金属层，围绕金属层的金属籽晶层，围绕金属籽晶层的阻挡层和形成在夹在金属层和金属籽晶层之间的部分中的金属硅化物层。
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公开(公告)号：US08338939B2
公开(公告)日：2012-12-25
申请号：US12834304
申请日：2010-07-12
申请人： Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
发明人： Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L21/30604 , H01L21/31111 , H01L21/762 , H01L21/76802 , H01L21/76831 , H01L21/76877 , H01L21/823475 , H01L21/823481 , H01L23/481 , H01L24/11 , H01L29/78 , H01L2224/131 , H01L2924/01029 , H01L2924/00014
摘要： A device includes a semiconductor substrate having a front surface and a back surface opposite the front surface. An insulation region extends from the front surface into the semiconductor substrate. An inter-layer dielectric (ILD) is over the insulation region. A landing pad extends from a top surface of the ILD into the insulation region. A through-substrate via (TSV) extends from the back surface of the semiconductor substrate to the landing pad.
摘要翻译： 一种器件包括具有与前表面相对的前表面和后表面的半导体衬底。 绝缘区域从前表面延伸到半导体衬底中。 层间电介质（ILD）在绝缘区域之上。 着陆垫从ILD的顶表面延伸到绝缘区域中。 贯穿基板通孔（TSV）从半导体基板的背面延伸到着陆焊盘。
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