发明申请
US20120100470A1 MASK BLANK, TRANSFER MASK, AND METHOD OF MANUFACTURING A TRANSFER MASK
有权
掩蔽层,转移掩模和制造转移掩模的方法
- 专利标题: MASK BLANK, TRANSFER MASK, AND METHOD OF MANUFACTURING A TRANSFER MASK
- 专利标题(中): 掩蔽层,转移掩模和制造转移掩模的方法
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申请号: US13378739申请日: 2010-06-17
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公开(公告)号: US20120100470A1公开(公告)日: 2012-04-26
- 发明人: Osamu Nozawa , Hiroyuki Iwashita , Masahiro Hashimoto , Atsushi Kominato
- 申请人: Osamu Nozawa , Hiroyuki Iwashita , Masahiro Hashimoto , Atsushi Kominato
- 申请人地址: JP Shinjuku-ku, Tokyo
- 专利权人: HOYA CORPORATION
- 当前专利权人: HOYA CORPORATION
- 当前专利权人地址: JP Shinjuku-ku, Tokyo
- 优先权: JP2009-145700 20090618
- 国际申请: PCT/JP2010/060269 WO 20100617
- 主分类号: G03F1/48
- IPC分类号: G03F1/48 ; G03F1/72 ; G03F1/50 ; B82Y30/00
摘要:
Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.