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1.发明申请公开(公告)号：US20120100470A1
公开(公告)日：2012-04-26
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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公开(公告)号：US20120189946A1
公开(公告)日：2012-07-26
申请号：US13384168
申请日：2010-07-14
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成， 硅和选自氧和氮的至少一种或多种元素。 在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低至少能够确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性， 在被照射带电粒子的状态下含有物质。
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3.发明授权公开(公告)号：US09017902B2
公开(公告)日：2015-04-28
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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4.发明授权Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US08822103B2
公开(公告)日：2014-09-02
申请号：US13288365
申请日：2011-11-03
摘要： A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo=26.624.
摘要翻译： 用于制造适于施加有形成为转印图案的透明基板和遮光膜的ArF准分子激光曝光光的转印掩模的掩模坯料。 遮光膜具有至少两层，一层主要由含有过渡金属，硅和氮的第一材料构成的下层，另一层是主要由含有过渡金属的第二材料构成的上层，硅 ，和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标物上的蚀刻中，下层的第一蚀刻速率与上层的第二蚀刻速率的比率为1.0以上且5.0以下 一部分。 另一比例满足下列公式CN≧-0.00526CMo2-0.640CMo = 26.624。
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公开(公告)号：US08637213B2
公开(公告)日：2014-01-28
申请号：US13384168
申请日：2010-07-14
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成， 硅和选自氧和氮的至少一种或多种元素。 在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低到至少确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性， 在被照射带电粒子的状态下含有物质。
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6.发明授权Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US08501372B2
公开(公告)日：2013-08-06
申请号：US13248896
申请日：2011-09-29
IPC分类号： G03F1/26
CPC分类号： G03F1/50 , G03F1/00 , G03F1/26 , G03F1/58 , G03F7/20 , G03F7/2041 , H01L21/266 , H01L21/268 , H01L21/31138
摘要： A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.
摘要翻译： 用于制造适于施加ArF准分子激光曝光光的二进制掩模的掩模坯料在透明基板上具有用于形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且对于曝光光的光密度为2.8以上，厚度为45nm以下。 下层由过渡金属和硅的总含量为90原子％以上的材料制成，厚度为30nm以上。 上层的厚度为3nm以上且6nm以下。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光的相位差为30度以下。
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公开(公告)号：US08512916B2
公开(公告)日：2013-08-20
申请号：US12935766
申请日：2009-03-31
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.
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公开(公告)号：US08323858B2
公开(公告)日：2012-12-04
申请号：US13223140
申请日：2011-08-31
IPC分类号： G03F1/24
摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.
摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。
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9.发明授权公开(公告)号：US08304147B2
公开(公告)日：2012-11-06
申请号：US12935517
申请日：2009-03-31
IPC分类号： G03F1/20
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30％以下。
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公开(公告)号：US08029948B2
公开(公告)日：2011-10-04
申请号：US12415429
申请日：2009-03-31
IPC分类号： G03F1/00
摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.
摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。
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