发明申请
- 专利标题： COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE
- 专利标题（中）： 包含硅，硅氮化硅，二氧化硅和/或硅氧烷的薄膜等低温沉积物的组合物和方法
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申请号： US13423436申请日： 2012-03-19
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公开(公告)号： US20120178267A1公开(公告)日： 2012-07-12
- 发明人: Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan Hendrix , Jeffrey Roeder
- 申请人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan Hendrix , Jeffrey Roeder
- 申请人地址： US CT Danbury
- 专利权人： ADVANCED TECHNOLOGY MATERIALS, INC.
- 当前专利权人： ADVANCED TECHNOLOGY MATERIALS, INC.
- 当前专利权人地址： US CT Danbury
- 主分类号： H01L21/318
- IPC分类号： H01L21/318 ; C07F7/02 ; H01L21/314
摘要：
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
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