发明申请
- 专利标题： SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13289107申请日： 2011-11-04
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公开(公告)号： US20120196439A1公开(公告)日： 2012-08-02
- 发明人: Kook-Joo KIM , Jin-Ho Kim , Seung-Ki Chae , Pil-Kwon Jun , Sun-Hee Park , Gyoung-Eun Byun
- 申请人： Kook-Joo KIM , Jin-Ho Kim , Seung-Ki Chae , Pil-Kwon Jun , Sun-Hee Park , Gyoung-Eun Byun
- 优先权： KR2011-0009334 20110131
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.
公开/授权文献
- US08455359B2 Semiconductor devices and methods of manufacturing the same 公开/授权日：2013-06-04
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