Semiconductor devices and methods of manufacturing the same
    1.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号:US08455359B2

    公开(公告)日:2013-06-04

    申请号:US13289107

    申请日:2011-11-04

    IPC分类号: H01L21/44 H01L21/4763

    摘要: In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

    摘要翻译: 在形成半导体器件的导电图案结构的方法中,在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时,形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20120196439A1

    公开(公告)日:2012-08-02

    申请号:US13289107

    申请日:2011-11-04

    IPC分类号: H01L21/28

    摘要: In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

    摘要翻译: 在形成半导体器件的导电图案结构的方法中,在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时,形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。

    Methods of manufacturing reference sample substrates for analyzing metal contamination levels
    3.
    发明申请
    Methods of manufacturing reference sample substrates for analyzing metal contamination levels 有权
    制造用于分析金属污染水平的参考样品基板的方法

    公开(公告)号:US20070172952A1

    公开(公告)日:2007-07-26

    申请号:US11646142

    申请日:2006-12-27

    IPC分类号: G01N31/00

    摘要: A method of manufacturing a reference sample substrate for analyzing a metal contamination level includes coating an organic silica solution including metal impurities on a semiconductor substrate and forming an oxide layer on the semiconductor substrate by thermally treating the semiconductor substrate having the coated organic silica solution. The metal impurities are substantially uniformly distributed in the oxide layer and the metal impurities are positioned at predetermined portions of the oxide layer.

    摘要翻译: 制造用于分析金属污染水平的参考样品基材的方法包括在半导体衬底上涂覆包含金属杂质的有机二氧化硅溶液,并通过热处理具有涂覆的有机二氧化硅溶液的半导体衬底,在半导体衬底上形成氧化物层。 金属杂质基本均匀分布在氧化物层中,金属杂质位于氧化物层的预定部分。

    Methods of manufacturing reference sample substrates for analyzing metal contamination levels
    4.
    发明授权
    Methods of manufacturing reference sample substrates for analyzing metal contamination levels 有权
    制造用于分析金属污染水平的参考样品基板的方法

    公开(公告)号:US07811836B2

    公开(公告)日:2010-10-12

    申请号:US11646142

    申请日:2006-12-27

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a reference sample substrate for analyzing a metal contamination level includes coating an organic silica solution including metal impurities on a semiconductor substrate and forming an oxide layer on the semiconductor substrate by thermally treating the semiconductor substrate having the coated organic silica solution. The metal impurities are substantially uniformly distributed in the oxide layer and the metal impurities are positioned at predetermined portions of the oxide layer.

    摘要翻译: 制造用于分析金属污染水平的参考样品基材的方法包括在半导体衬底上涂覆包含金属杂质的有机二氧化硅溶液,并通过热处理具有涂覆的有机二氧化硅溶液的半导体衬底,在半导体衬底上形成氧化物层。 金属杂质基本均匀分布在氧化物层中,金属杂质位于氧化物层的预定部分。

    TARGET BIOMATERIAL DETECTING KIT AND METHOD OF DETECTING TARGET BIOMATERIAL
    6.
    发明申请
    TARGET BIOMATERIAL DETECTING KIT AND METHOD OF DETECTING TARGET BIOMATERIAL 审中-公开
    目标生物材料检测试剂盒和检测目标生物材料的方法

    公开(公告)号:US20100273266A1

    公开(公告)日:2010-10-28

    申请号:US12747504

    申请日:2008-10-29

    IPC分类号: G01N33/20

    CPC分类号: G01N33/54373 G01N33/587

    摘要: Provided are a target biomaterial detecting kit and a method of detecting the target biomaterial. The target biomaterial detecting kit includes a guided mode resonance filter comprising a substrate transmitting or reflecting light, a grating layer formed on the substrate, and a capture layer formed on the grating layer to capture a target biomaterial; and a nano complex comprising a nanoparticle head and a connection tail. Therefore, the wavelength peak of a reflection/transmission spectrum of light coming from the guided mode resonance filter can be largely shifted, and thus the presence and quantity of a target biomaterial can be easily detected. Moreover, although the amount of the target biomaterial is small, the target biomaterial can be reliably detected.

    摘要翻译: 提供了目标生物材料检测试剂盒和检测目标生物材料的方法。 目标生物材料检测试剂盒包括引导模式共振滤波器,其包括透射或反射光的基板,形成在基板上的光栅层,以及形成在光栅层上以捕获目标生物材料的捕获层; 以及包含纳米颗粒头和连接尾部的纳米复合物。 因此,来自引导谐振滤波器的光的反射/透射光谱的波长峰值可能发生很大的偏移,因此可以容易地检测目标生物材料的存在和数量。 此外,虽然目标生物材料的量少,但可以可靠地检测目标生物材料。