公开(公告)号：US20120196439A1

公开(公告)日：2012-08-02

申请号：US13289107

申请日：2011-11-04

申请人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

发明人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

IPC分类号： H01L21/28

CPC分类号： H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

摘要翻译： 在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。

公开(公告)号：US20080121622A1

公开(公告)日：2008-05-29

申请号：US11771896

申请日：2007-06-29

申请人： Dong-Won HWANG ,  Kook-Joo KIM ,  Jung-In LA ,  Pil-Kwon JUN ,  Seung-Ki CHAE ,  Yang-Koo LEE

发明人： Dong-Won HWANG ,  Kook-Joo KIM ,  Jung-In LA ,  Pil-Kwon JUN ,  Seung-Ki CHAE ,  Yang-Koo LEE

IPC分类号： C09K13/08 ,  C03C15/00

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31133 ,  H01L21/76804 ,  H01L21/76897 ,  H01L27/10855

摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

摘要翻译： 在用于蚀刻氧化硅的组合物和使用该组合物形成接触孔的方法中，组合物包含约0.01至约2重量％的二氟化铵，约2至约35重量％的有机酸 ，约0.05至约1重量％的无机酸，以及剩余的低极性有机溶剂。 组合物可以减少在用于形成接触孔的蚀刻工艺中暴露的金属硅化物图案的损伤。

公开(公告)号：US08455359B2

公开(公告)日：2013-06-04

申请号：US13289107

申请日：2011-11-04

申请人： Kook-Joo Kim ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

发明人： Kook-Joo Kim ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

摘要翻译： 在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。

公开(公告)号：US20110073801A1

公开(公告)日：2011-03-31

申请号：US12926615

申请日：2010-11-30

申请人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In LA ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In LA ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： C09K13/08

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31133 ,  H01L21/76804 ,  H01L21/76897 ,  H01L27/10855

摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

公开(公告)号：US20070000523A1

公开(公告)日：2007-01-04

申请号：US11454829

申请日：2006-06-19

申请人： Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

发明人： Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

IPC分类号： B08B3/04

CPC分类号： H01L21/02071 ,  C11D3/0073 ,  C11D7/10 ,  C11D7/3209 ,  C11D11/0023 ,  H01L27/10885

摘要： A cleaning composition is disclosed. The cleaning composition comprises about 80 to 99.8999 percent by weight of an ammonium fluoride aqueous solution, about 0.1 to 5 percent by weight of a buffering agent, and about 0.0001 to 15 percent by weight of a corrosion-inhibiting agent. A method of preparing the cleaning composition, a method of cleaning a substrate using the cleaning composition, and a method of manufacturing a semiconductor device using the cleaning composition are also disclosed.

摘要翻译： 公开了一种清洁组合物。 该清洗组合物含有约80-99.8999重量％的氟化铵水溶液，约0.1-5重量％的缓冲剂和约0.0001-15重量％的腐蚀抑制剂。 还公开了一种制备清洁组合物的方法，使用清洁组合物清洁基材的方法，以及使用该清洁组合物制造半导体器件的方法。

公开(公告)号：US07879736B2

公开(公告)日：2011-02-01

申请号：US11771896

申请日：2007-06-29

申请人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In La ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In La ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31133 ,  H01L21/76804 ,  H01L21/76897 ,  H01L27/10855

摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

摘要翻译： 在用于蚀刻氧化硅的组合物和使用该组合物形成接触孔的方法中，组合物包含约0.01至约2重量％的二氟化铵，约2至约35重量％的有机酸 ，约0.05至约1重量％的无机酸，以及剩余的低极性有机溶剂。 组合物可以减少在用于形成接触孔的蚀刻工艺中暴露的金属硅化物图案的损伤。

公开(公告)号：US20090130842A1

公开(公告)日：2009-05-21

申请号：US12289035

申请日：2008-10-17

申请人： Dong-Won Hwang ,  Kook-Joo Kim ,  Yang-koo Lee ,  Hun-Jung Yi

发明人： Dong-Won Hwang ,  Kook-Joo Kim ,  Yang-koo Lee ,  Hun-Jung Yi

IPC分类号： H01L21/4763 ,  H01L21/302

CPC分类号： H01L27/10814 ,  H01L21/31111 ,  H01L21/76804 ,  H01L27/10817 ,  H01L27/10855

摘要： A contact hole forming method and a method of manufacturing semiconductor device using the same may include forming a layer on a substrate; anisotropically etching the layer to form a dummy contact hole exposing the substrate; isotropically etching a sidewall of the dummy contact hole to form a contact hole by alternatively and repeatedly supplying an etching solution including a fluoride salt in a low-polarity organic solvent and deionized water to the dummy contact hole. The methods increase reliability of semiconductor memory devices.

摘要翻译： 接触孔形成方法和使用其的半导体器件的制造方法可以包括在衬底上形成层; 各向异性地蚀刻该层以形成暴露该衬底的虚拟接触孔; 各向同性地蚀刻虚拟接触孔的侧壁，通过交替地反复地提供包含氟化物盐在低极性有机溶剂中的蚀刻溶液和去离子水形成接触孔到虚拟接触孔。 这些方法提高了半导体存储器件的可靠性。