发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13413714申请日: 2012-03-07
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公开(公告)号: US20120228606A1公开(公告)日: 2012-09-13
- 发明人: Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Masahiro TAKAHASHI , Hideyuki KISHIDA
- 申请人: Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Masahiro TAKAHASHI , Hideyuki KISHIDA
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2011-054610 20110311
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/44
摘要:
The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.