公开(公告)号：US20120228606A1

公开(公告)日：2012-09-13

申请号：US13413714

申请日：2012-03-07

申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA

发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/78 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

摘要： The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

摘要翻译： 半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极， 栅极绝缘膜。 第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。 所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。

公开(公告)号：US20100123130A1

公开(公告)日：2010-05-20

申请号：US12618944

申请日：2009-11-16

申请人： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

发明人： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

摘要： It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

摘要翻译： 本发明的目的是提供一种适用于半导体器件的氧化物半导体。 或者，另一目的是提供一种使用氧化物半导体的半导体器件。 提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。 在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

公开(公告)号：US20110121289A1

公开(公告)日：2011-05-26

申请号：US12950186

申请日：2010-11-19

申请人： Akiharu MIYANAGA ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Shunpei YAMAZAKI

发明人： Akiharu MIYANAGA ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/10 ,  H01L29/41733

摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US20110079778A1

公开(公告)日：2011-04-07

申请号：US12894791

申请日：2010-09-30

申请人： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L21/02554 ,  G02F1/1368 ,  G02F1/167 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02266 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.

摘要翻译： 本发明的目的是提供一种其中使用氧化物半导体的稳定电特性的半导体器件。 氧化物半导体层中的杂质浓度以如下方式降低：以与氧化物半导体层接触的方式形成包括以悬挂键为代表的许多缺陷的氧化硅层，以及诸如氢或水分的杂质（氢原子或 包含在氧化物半导体层中的包括氢原子的化合物如H 2 O的化合物）扩散到氧化硅层中。 此外，在氧化物半导体层和氧化硅层之间设置混合区域。 混合区域包括氧，硅以及包含在氧化物半导体中的至少一种金属元素。

公开(公告)号：US20110101335A1

公开(公告)日：2011-05-05

申请号：US12912196

申请日：2010-10-26

申请人： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

摘要翻译： 本发明的目的是提供一种包括具有稳定电特性的氧化物半导体的半导体器件。 在氧化物半导体层上形成具有以悬挂键为代表的许多缺陷的绝缘层，其间具有氧过剩混合区域或氧过剩氧化物绝缘层，由此氧化物半导体层中的诸如氢或水分的杂质（ 氢原子或包含氢原子如H 2 O的化合物）通过氧过剩混合区域或氧 - 过量氧化物绝缘层移动并扩散到绝缘层中。 因此，氧化物半导体层的杂质浓度降低。

公开(公告)号：US20120298998A1

公开(公告)日：2012-11-29

申请号：US13473653

申请日：2012-05-17

申请人： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

IPC分类号： H01L29/786 ,  H01L21/20

CPC分类号： H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

摘要： The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

摘要翻译： 氧化物半导体膜中的杂质浓度降低，可以获得高可靠性。

公开(公告)号：US20100264412A1

公开(公告)日：2010-10-21

申请号：US12759220

申请日：2010-04-13

申请人： Shunpei YAMAZAKI ,  Hiromichi GODO ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Hiromichi GODO ,  Hideyuki KISHIDA

IPC分类号： H01L29/22 ,  H01L21/363

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78696

摘要： An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor including an oxide layer including Zn is formed by stacking an oxide semiconductor layer including insulating oxide over an oxide layer so that the oxide layer is in contact with a source electrode layer or a drain electrode layer with the oxide semiconductor layer including insulating oxide interposed therebetween, whereby variation in the threshold voltage of the transistor can be reduced and electric characteristics can be stabilized.

摘要翻译： 本发明的目的是提供一种包括包含Zn并且不包括诸如In或Ga的稀有金属的氧化物层的晶体管。另一个目的是减少包括含有Zn的氧化物层的晶体管中的截止电流和稳定电特性。 包括含有Zn的氧化物层的晶体管通过在氧化物层上层叠包含绝缘氧化物的氧化物半导体层而形成，使得氧化物层与源极电极层或漏极电极层接触，其中氧化物半导体层包括绝缘氧化物 从而可以减小晶体管的阈值电压的变化，并且可以使电特性稳定。

公开(公告)号：US20120286278A1

公开(公告)日：2012-11-15

申请号：US13558638

申请日：2012-07-26

申请人： Toshikazu KONDO ,  Hideyuki KISHIDA

发明人： Toshikazu KONDO ,  Hideyuki KISHIDA

IPC分类号： H01L29/786

CPC分类号： H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78663 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78693

摘要： In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

摘要翻译： 在薄膜晶体管中，防止阈值电压的关断电流的增加或负偏移。 在薄膜晶体管中，在氧化物半导体层与源极电极层和漏极电极层之间设置有缓冲层。 缓冲层包括在氧化物半导体层的中间部分上的绝缘体或半导体的金属氧化物层。 金属氧化物层用作抑制杂质掺入到氧化物半导体层中的保护层。 因此，在薄膜晶体管中，可以防止阈值电压的关断电流的增加或负偏移。

公开(公告)号：US20120256179A1

公开(公告)日：2012-10-11

申请号：US13528009

申请日：2012-06-20

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

摘要翻译： 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。 此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

公开(公告)号：US20100224873A1

公开(公告)日：2010-09-09

申请号：US12717324

申请日：2010-03-04

申请人： Junichiro SAKATA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Junichiro SAKATA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

摘要翻译： 本发明的目的是提供一种包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括半导体层为氧化物半导体层的反交错薄膜晶体管的半导体器件中，在氧化物半导体层上设置有缓冲层。 缓冲层与半导体层的沟道形成区域和源极和漏极电极层接触。 缓冲层的膜具有电阻分布。 设置在半导体层的沟道形成区域上的区域具有比半导体层的沟道形成区域更低的导电性，并且与源极和漏极电极层接触的区域具有比半导体的沟道形成区域更高的导电性 层。