公开(公告)号：US20120228606A1

公开(公告)日：2012-09-13

申请号：US13413714

申请日：2012-03-07

申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA

发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/78 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

摘要： The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

摘要翻译： 半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极， 栅极绝缘膜。 第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。 所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。

公开(公告)号：US20130062600A1

公开(公告)日：2013-03-14

申请号：US13604937

申请日：2012-09-06

申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Sachiaki TEZUKA ,  Tomokazu YOKOI ,  Yusuke SHINO

发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Sachiaki TEZUKA ,  Tomokazu YOKOI ,  Yusuke SHINO

IPC分类号： H01L29/12 ,  H01L21/336

CPC分类号： H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

摘要： The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

摘要翻译： 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

公开(公告)号：US20120244658A1

公开(公告)日：2012-09-27

申请号：US13419468

申请日：2012-03-14

申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO

发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO

IPC分类号： H01L21/425

CPC分类号： H01L21/425 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.

摘要翻译： 提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。 在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤 压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。

公开(公告)号：US20120235137A1

公开(公告)日：2012-09-20

申请号：US13415080

申请日：2012-03-08

申请人： Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

发明人： Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC分类号： H01L29/78 ,  H01L21/44 ,  H01L29/22

CPC分类号： H01L29/78618 ,  G02F1/136204 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/0259 ,  H01L21/265 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

摘要翻译： 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。 通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

公开(公告)号：US20120315735A1

公开(公告)日：2012-12-13

申请号：US13482398

申请日：2012-05-29

申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/336

CPC分类号： H01L29/7869

摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.

摘要翻译： 提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。 提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。 在包括具有沟道形成区域的氧化物半导体膜的晶体管的制造方法中，在氧化物半导体膜上形成包含金属元素的绝缘膜，以及通过注入在绝缘膜上添加的掺杂剂的低电阻区域 包含的方法形成在氧化物半导体膜中。 沟道形成区域位于沟道长度方向的低电阻区域之间。

公开(公告)号：US20120315730A1

公开(公告)日：2012-12-13

申请号：US13484670

申请日：2012-05-31

申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618

摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

摘要翻译： 提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。 提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。 晶体管包括包括沟道形成区域的氧化物半导体膜和包含金属元素和掺杂剂的低电阻区域。 沟道形成区域位于沟道长度方向的低电阻区域之间。 在晶体管的制造方法中，通过在氧化物半导体膜与包含金属元素的膜接触的状态下进行的热处理来添加金属元素，并且通过植入通过包含金属元素的膜添加掺杂剂 形成包含金属元素和掺杂剂的低电阻区域。

公开(公告)号：US20120319100A1

公开(公告)日：2012-12-20

申请号：US13483078

申请日：2012-05-30

申请人： Kyoko YOSHIOKA ,  Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shinya SASAGAWA

发明人： Kyoko YOSHIOKA ,  Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shinya SASAGAWA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L21/324 ,  H01L29/66969

摘要： A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed.

摘要翻译： 提供抑制功耗增加的小型化半导体装置及其制造方法。 提供了一种具有稳定电特性的高度可靠的半导体器件及其半导体器件的制造方法。 为了降低氧化物半导体膜的表面的平均表面粗糙度，用电场加速的离子照射氧化物半导体膜。 因此，可以抑制晶体管的漏电流和功耗的增加。 此外，通过进行热处理使得氧化物半导体膜包括具有与氧化物半导体膜的表面基本垂直的c轴的晶体，由于可见光或紫外线的照射而导致的氧化物半导体膜的电特性的变化 可以抑制。

公开(公告)号：US20120225543A1

公开(公告)日：2012-09-06

申请号：US13402940

申请日：2012-02-23

申请人： Shinji OHNO ,  Yuichi SATO ,  Junichi KOEZUKA

发明人： Shinji OHNO ,  Yuichi SATO ,  Junichi KOEZUKA

IPC分类号： H01L21/20

CPC分类号： H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： A method for manufacturing a highly reliable semiconductor device with less change in threshold voltage is provided. An insulating film from which oxygen can be released by heating is formed in contact with an oxide semiconductor layer, and light irradiation treatment is performed on a gate electrode or a metal layer formed in a region which overlaps with the gate electrode, so that oxygen is added into the oxide semiconductor layer in a region which overlaps with the gate electrode. Accordingly, oxygen vacancies or interface states in the oxide semiconductor layer in a region which overlaps with the gate electrode can be reduced.

摘要翻译： 提供了一种用于制造具有较小阈值电压变化的高可靠性半导体器件的方法。 与氧化物半导体层接触形成可以通过加热而释放氧的绝缘膜，并且在与栅电极重叠的区域中形成的栅电极或金属层上进行光照射处理，使得氧为 在与栅电极重叠的区域中添加到氧化物半导体层中。 因此，可以减少与栅电极重叠的区域中的氧化物半导体层中的氧空位或界面态。

公开(公告)号：US20130023087A1

公开(公告)日：2013-01-24

申请号：US13547451

申请日：2012-07-12

申请人： Shunpei YAMAZAKI ,  Shinji OHNO ,  Yuichi SATO ,  Junichi KOEZUKA ,  Sachiaki TEZUKA

发明人： Shunpei YAMAZAKI ,  Shinji OHNO ,  Yuichi SATO ,  Junichi KOEZUKA ,  Sachiaki TEZUKA

IPC分类号： H01L21/385 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225

摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

摘要翻译： 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

公开(公告)号：US20120187397A1

公开(公告)日：2012-07-26

申请号：US13356012

申请日：2012-01-23

申请人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

发明人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC分类号： H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

摘要翻译： 提供了包括氧化物半导体并且具有良好的电特性的半导体器件。 在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。 氧化物半导体膜的侧面与绝缘膜接触。 氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。 栅极绝缘膜与氧化物半导体膜形成并接触。 在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。 源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。