摘要:
The present invention provides a particulate composition wherein an oil component containing reduced coenzyme Q10 is polydispersed forming a domain in a matrix containing a water-soluble excipient, which simultaneously shows high oxidative stability and high oral absorbability, a production method thereof, and a stabilizing method thereof. It also provides a food, food with nutrient function claims, food for specified health uses, dietary supplement, nutritional product, animal drug, drink, feed, pet food, cosmetic, pharmaceutical product, therapeutic drug, prophylactic drug and the like, which contain the composition.
摘要:
It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
摘要:
A coenzyme Q10-containing water soluble composition comprises coenzyme Q10, a hydrophilic polyglycerol fatty acid ester, a lipophilic sucrose fatty acid ester and an aqueous phase component and a process for producing the same are disclosed. A coenzyme Q10-containing water-soluble dry powder can be obtained by drying the above-mentioned coenzyme Q10-containing water soluble composition. A food, functional food, beverage, pharmaceutical product, quasi drug, cosmetic, or animal food can be obtained by using the above-mentioned coenzyme Q10-containing water soluble composition or the above-mentioned coenzyme Q10-containing water-soluble dry powder. The coenzyme Q10-containing water soluble composition has a high bioavailability, and maintains a stable emulsion form for a long period of time from refrigeration temperature to room temperature and allows efficient supply.
摘要:
The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.
摘要:
An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor including an oxide layer including Zn is formed by stacking an oxide semiconductor layer including insulating oxide over an oxide layer so that the oxide layer is in contact with a source electrode layer or a drain electrode layer with the oxide semiconductor layer including insulating oxide interposed therebetween, whereby variation in the threshold voltage of the transistor can be reduced and electric characteristics can be stabilized.
摘要:
It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
摘要:
The object of the invention is to provide a composition for prevention and/or amelioration of life-style related disease, and/or a composition for inhibition and/or amelioration of increase in body weight, comprising at least one compound selected from the group consisting of glabrene, glabridin, glabrol, 3′-hydroxy-4′-O-methylglabridin, 4′-O-methylglabridin and hyspaglabridin B as compounds having a PPAR ligand activity effective in amelioration of insulin resistance and in prevention and/or amelioration of life-style related diseases such as visceral fat obesity, type 2 diabetes, hyperlipemia and hypertension, which can be utilized in food and drink such as health food and health functional food (food for specified uses and food with nutrient function), pharmaceutical preparations, non-pharmaceutical preparations, cosmetics etc. At least one compound selected from the group consisting of glabrene, glabridin, glabrol, 3′-hydroxy-4′-O-methylglabridin, 4′-O-methylglabridin and hyspaglabridin B is dissolved in medium-chain fatty acid triglycerides and/or partial glycerides, whereby the stability of the compound(s) is improved and the processability thereof into food and drink, pharmaceutical preparations, non-pharmaceutical preparations, cosmetics etc. is also improved.
摘要:
The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.
摘要:
By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.