发明申请
US20120282548A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM
有权
图案形成方法，丙烯酸敏感或辐射敏感性树脂组合物和耐腐蚀膜
- 专利标题： PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM
- 专利标题（中）： 图案形成方法，丙烯酸敏感或辐射敏感性树脂组合物和耐腐蚀膜
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申请号： US13521164申请日： 2011-01-07
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公开(公告)号： US20120282548A1公开(公告)日： 2012-11-08
- 发明人: Yuichiro Enomoto , Shinji Tarutani , Sou Kamimura , Kaoru Iwato , Keita Kato , Akinori Shibuya
- 申请人： Yuichiro Enomoto , Shinji Tarutani , Sou Kamimura , Kaoru Iwato , Keita Kato , Akinori Shibuya
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM CORPORATION
- 当前专利权人： FUJIFILM CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-003386 20100108; JP2010-077431 20100330; JP2010-261576 20101124
- 国际申请： PCT/JP2011/050597 WO 20110107
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/075 ; C07D211/46 ; C08F226/02 ; C07C271/14 ; G03F7/027 ; G03F7/004
摘要：
Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.
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