Invention Application
- Patent Title: VIALESS MEMORY STRUCTURE AND METHOD OF MANUFACTURING SAME
- Patent Title (中): 无限记忆结构及其制造方法
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Application No.: US13154346Application Date: 2011-06-06
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Publication No.: US20120306033A1Publication Date: 2012-12-06
- Inventor: Kimihiro Satoh , Yiming Huai , Jing Zhang
- Applicant: Kimihiro Satoh , Yiming Huai , Jing Zhang
- Applicant Address: US CA Fremont
- Assignee: AVALANCHE TECHNOLOGY, INC.
- Current Assignee: AVALANCHE TECHNOLOGY, INC.
- Current Assignee Address: US CA Fremont
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12
Abstract:
A method of manufacturing a magnetic memory cell, including a magnetic tunnel junction (MTJ), includes using silicon nitride layer and silicon oxide layer to form a trench for depositing copper to be employed for connecting the MTJ to other circuitry without the use of a via.
Public/Granted literature
- US09082695B2 Vialess memory structure and method of manufacturing same Public/Granted day:2015-07-14
Information query
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